IRF630NPBF

Mfr. #:: IRF630NPBF
Fabricante:: Infineon Technologies
Descripción:: MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRF630NPBF Ficha de datos
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Más información:: IRF630NPBF más información

Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: A través del orificio

Paquete / Caja:: TO-220-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 200 V

Id - Corriente de drenaje continua:: 9.3 A

Rds On - Resistencia de la fuente de drenaje:: 300 mOhms

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 23.3 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 175 C

Pd - Disipación de energía:: 82 W

Configuración:: Único

Modo de canal:: Mejora

Embalaje:: Tubo

Altura:: 15.65 mm

Longitud:: 10 mm

Tipo de transistor:: 1 N-Channel

Ancho:: 4.4 mm

Marca:: Infineon Technologies

Transconductancia directa - Mín .:: 4.9 S

Otoño:: 15 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 14 ns

Cantidad de paquete de fábrica:: 1000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 27 ns

Tiempo típico de retardo de encendido:: 7.9 ns

Parte # Alias:: SP001564792

Unidad de peso:: 0.211644 oz

Tags: IRF630NP, IRF630N, IRF630, IRF63, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF630NPBF Descripción

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V

***itex: Transistor: N-MOSFET; unipolar; 200V; 9A; 0.4ohm; 0.57W; -55+150 deg.C; THT; TO220

***ical: Trans MOSFET N-CH Si 200V 9.3A Automotive 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 36 W

***roFlash: Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, 9.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.3A; Junction to Case Thermal Resistance A:1.83°C/W; Package / Case:TO-220AB; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

IRF630NPBF Más información

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRF630NPBF DISTI # V36:1790_13890561	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	2946	1000:$0.3602 500:$0.4242 100:$0.4979 10:$0.6250 1:$0.7082
IRF630NPBF DISTI # V99:2348_13890561	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	707	1000:$0.3602 500:$0.4242 100:$0.4979 10:$0.6250 1:$0.7082
IRF630NPBF DISTI # IRF630NPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 9.3A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	639In Stock	1000:$0.4125 500:$0.5225 100:$0.6738 10:$0.8530 1:$0.9600
IRF630NPBF DISTI # 21061767	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	11530	1000:$0.3004 500:$0.3445 100:$0.3877
IRF630NPBF DISTI # 27128682	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	2946	1000:$0.3602 500:$0.4242 100:$0.4979 25:$0.6250
IRF630NPBF DISTI # 30349950	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	707	500:$0.4242 100:$0.4979 23:$0.6250
IRF630NPBF DISTI # IRF630NPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF630NPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 1317	1:$0.4849 10:$0.4569 25:$0.4559 50:$0.4539 100:$0.4039 500:$0.3589 1000:$0.3129
IRF630NPBF DISTI # IRF630NPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: IRF630NPBF) RoHS: Compliant Min Qty: 1000	Asia - 0
IRF630NPBF DISTI # SP001564792	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: SP001564792) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.4839 10:€0.4519 25:€0.4509 50:€0.4499 100:€0.3989 500:€0.3479 1000:€0.3159
IRF630NPBF DISTI # 63J7338	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	355	1:$1.0000 10:$0.8600 100:$0.6750 500:$0.6040 1000:$0.4900 2500:$0.4420 10000:$0.4270
IRF630NPBF. DISTI # 26AC0605	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	0	1:$1.0200 10:$0.8770 100:$0.6890 500:$0.6040 1000:$0.4900 2500:$0.4420 10000:$0.4270
IRF630NPBF DISTI # 70017265	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.3Ohm,ID 9.3A,TO-220AB,PD 82W,VGS +/-20V RoHS: Compliant	194	1:$0.8450 10:$0.7450 100:$0.6500 500:$0.5630 1000:$0.4970
IRF630NPBF DISTI # 942-IRF630NPBF	Infineon Technologies AG	MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC RoHS: Compliant	6088	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750 2000:$0.3330
IRF630NPBF	Infineon Technologies AG	Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	45	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
IRF630NPBF	Infineon Technologies AG	Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant	10757Tube	30:$0.3850 300:$0.3450 1750:$0.2950
IRF630NPBF DISTI # 5430068	Infineon Technologies AG	MOSFET N-CHANNEL 200V 9.3A TO220AB, EA	4885	1:£2.0000 20:£0.4300 25:£0.4000
IRF630NPBF DISTI # 9195025	Infineon Technologies AG	MOSFET N-CHANNEL 200V 9.3A TO220AB, TU	450	50:£0.4440 250:£0.3770 1000:£0.2970 2500:£0.2640
IRF630NPBF	International Rectifier	9.3A, 200V, 0.3OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB	29	28:$0.5000 6:$0.7500 1:$1.0000
IRF630NPBF DISTI # IRF630NPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,9.5A,82W,TO220AB	807	1:$0.7900 3:$0.5240 10:$0.4217 100:$0.3603
IRF630NPBF DISTI # IRF630NPBF	Infineon Technologies AG	N-Ch 200V 9,3A 82W 0,3R TO220AB RoHS: Compliant	3000	10:€0.5880 50:€0.3480 200:€0.2880 500:€0.2775
IRF630NPBF	Infineon Technologies AG	INSTOCK	1748
IRF630NPBF DISTI # XSLY00000000764	INFINEON/IR	TO-220AB RoHS: Compliant	14076	2350:$0.3029 14076:$0.2827
IRF630NPBF DISTI # XSFP00000008771	Infineon Technologies AG	Power Field-Effect Transistor, 13AI(D),30V,0.011ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,MS-012AA RoHS: Compliant	8518	300:$0.5133 8518:$0.4812
IRF630NPBF DISTI # C1S322000599628	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	3033	1000:$0.3602 500:$0.4242 100:$0.4979 10:$0.6250
IRF630NPBF DISTI # C1S327400157735	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	3950	100:$0.6930 50:$0.7940 10:$1.1800 5:$1.3800
IRF630NPBF DISTI # C1S322000481417	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	11530	1000:$0.4610 500:$0.5020 100:$0.6110 50:$0.6850 25:$0.7540 5:$1.8800
IRF630NPBF DISTI # 8648344	Infineon Technologies AG	MOSFET, N, 200V, 9.5A, TO-220 RoHS: Compliant	2509	5:£0.4390 25:£0.4080 100:£0.3970 250:£0.3850 500:£0.3270
IRF630NPBF	Infineon Technologies AG	200V,300m,9.3A,N-Channel Power MOSFET	800	1:$0.5800 100:$0.4900 500:$0.4300 1000:$0.4200
IRF630NPBF DISTI # 8648344	Infineon Technologies AG	MOSFET, N, 200V, 9.5A, TO-220 RoHS: Compliant	2794	1:$1.3800 10:$1.1800 100:$0.8990 500:$0.7950 1000:$0.6270 2000:$0.5570

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Disponibilidad

Valores:: Available
En orden:: 1988
Ingrese la cantidad:

El precio actual de IRF630NPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,82 US$~~; ~~0,82 US$~~

10: ~~0,70 US$~~; ~~7,00 US$~~

100: ~~0,54 US$~~; ~~53,80 US$~~

500: ~~0,48 US$~~; ~~238,00 US$~~

1000: ~~0,38 US$~~; ~~375,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IRF630NPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes