 | |  | |
| PartNumber | IRF2907ZSTRLPBF | IRF2907ZSPBF | IRF2907ZS-7PPBF |
| Description | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | MOSFET N-CH 75V 160A D2PAK7 |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
| Id Continuous Drain Current | 170 A | 170 A | - |
| Rds On Drain Source Resistance | 4.5 mOhms | 4.5 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 180 nC | 180 nC | - |
| Pd Power Dissipation | 330 W | 330 W | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | Tube | Tube |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001550988 | SP001561548 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.056438 oz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Channel Mode | - | Enhancement | Enhancement |
| Type | - | Automotive MOSFET | - |
| Fall Time | - | 100 ns | 44 ns |
| Rise Time | - | 140 ns | 90 ns |
| Typical Turn Off Delay Time | - | 97 ns | 92 ns |
| Typical Turn On Delay Time | - | 19 ns | 21 ns |
| Package Case | - | - | TO-263-7 |
| Pd Power Dissipation | - | - | 300 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 180 A |
| Vds Drain Source Breakdown Voltage | - | - | 75 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 3.8 mOhms |
| Qg Gate Charge | - | - | 170 nC |
| Forward Transconductance Min | - | - | 94 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF2907ZSTRLPBF | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | |
| IRF2907ZS-7PPBF | MOSFET N-CH 75V 160A D2PAK7 | ||
| IRF2907ZSTRLPBF | MOSFET N-CH 75V 75A D2PAK | ||
| IRF2907ZSPBF | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | ||
Infineon / IR |
IRF2907ZSPBF | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | |
| IRF2907ZS-7PPBF. | Nuevo y original | ||
| IRF2907ZS | Nuevo y original | ||
| IRF2907ZS-7P | Nuevo y original | ||
| IRF2907ZSPBF,IRF2907ZS | Nuevo y original | ||
| IRF2907ZSTRL | Nuevo y original | ||
| IRF2907ZSTRLPBF,IRF2907Z | Nuevo y original |