PartNumber | IRF2903ZPBF | IRF2903ZSPBF | IRF2903ZLPBF |
Description | MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg | MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC | MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | SMD/SMT | Through Hole |
Package / Case | TO-220-3 | TO-263-3 | TO-262-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 75 A | 260 A | 260 A |
Rds On Drain Source Resistance | 2.4 mOhms | 2.4 mOhms | 2.4 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 160 nC | 160 nC | 160 nC |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 290 W | 290 W | 290 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | - |
Packaging | Tube | Tube | Tube |
Height | 15.65 mm | 4.4 mm | 9.45 mm |
Length | 10 mm | 10 mm | 10.2 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.4 mm | 9.25 mm | 4.5 mm |
Brand | Infineon / IR | Infineon / IR | Infineon / IR |
Forward Transconductance Min | 120 S | - | - |
Fall Time | 37 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 100 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 48 ns | - | - |
Typical Turn On Delay Time | 24 ns | - | - |
Part # Aliases | SP001561574 | SP001569980 | SP001561564 |
Unit Weight | 0.211644 oz | 0.139332 oz | 0.084199 oz |