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IRF2903ZSPBF

IRF2903ZSPBF
Mfr. #:
IRF2903ZSPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF2903ZSPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF2903ZSPBF DatasheetIRF2903ZSPBF Datasheet (P4-P6)IRF2903ZSPBF Datasheet (P7-P9)IRF2903ZSPBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
260 A
Rds On - Resistencia de la fuente de drenaje:
2.4 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
160 nC
Pd - Disipación de energía:
290 W
Configuración:
Único
Embalaje:
Tubo
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001569980
Unidad de peso:
0.139332 oz
Tags
IRF2903ZS, IRF2903, IRF290, IRF29, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRF2903ZSPBF N-channel MOSFET Transistor, 235 A, 30 V, 3-Pin D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:231W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:231mJ; Current Id Max:75A; Fall Time tf:37ns; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:231W; Power Dissipation Pd:231W; Pulse Current Idm:1020A; Rise Time:100ns; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:0.021V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ
***r Electronics
Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***i-Key
MOSFET N-CH 30V 75A D2PAK
***Yang
TO-263AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH - Bulk
*** Electronic Components
MOSFET N-Ch LL UltraFET PWM Optimized
***nell
MOSFET, N, SMD, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
***ineon SCT
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***i-Key
MOSFET N-CH 30V 75A D2PAK
*** Electronic Components
MOSFET N-Ch UltraFET Logic Level
***et
TO263AB,SINGLE,NCH,30V,0,0032 OHM LOGIC LVL PWM OPT ULTR
*** Electronics
MOSFET N-CH 25V 80A TO-263
***i-Key
N-CHANNEL POWER MOSFET
***hard Electronics
Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
***el Nordic
Contact for details
***emi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***et Europe
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Parte # Mfg. Descripción Valores Precio
IRF2903ZSPBF
DISTI # V99:2348_13890430		Infineon Technologies AGTrans MOSFET N-CH Si 30V 235A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		7
  • 100:$2.5810
  • 25:$2.7210
  • 10:$2.9530
  • 1:$3.2800
IRF2903ZSPBF
DISTI # IRF2903ZSPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 75A D2PAK
RoHS: Compliant
Min Qty: 300
Container: Tube		Limited Supply - Call
    IRF2903ZSPBFInternational RectifierPower Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		250
    • 1000:$1.9100
    • 500:$2.0100
    • 100:$2.1000
    • 25:$2.1900
    • 1:$2.3500
    IRF2903ZSPBF
    DISTI # 942-IRF2903ZSPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
    RoHS: Compliant    		0
      IRF2903ZSPBF
      DISTI # IRF2903ZSPBF      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,260A,290W,D2PAK82
      • 1:$2.2800
      • 3:$2.0800
      • 10:$1.7200
      • 100:$1.4300
      IRF2903ZSPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 550
        IRF2903ZSPBF
        DISTI # 1551909        		Infineon Technologies AGMOSFET, N D2-PAK
        RoHS: Compliant        		0
        • 1:$5.3000
        • 10:$4.9500
        • 100:$4.3600
        • 250:$4.0500
        • 500:$3.8400
        • 1000:$3.6500
        IRF2903ZSPBF
        DISTI # C1S322000520929        		Infineon Technologies AGMOSFETs
        RoHS: Compliant        		7
        • 1:$3.4370
        Imagen Parte # Descripción
        IRF2907ZSTRLPBF

        Mfr.#: IRF2907ZSTRLPBF

        OMO.#: OMO-IRF2907ZSTRLPBF

        		 MOSFET MOSFT 75V 170A 4.5mOhm 180nC
        IRF2903ZPBF

        Mfr.#: IRF2903ZPBF

        OMO.#: OMO-IRF2903ZPBF

        		 MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg
        IRF2907ZLPBF

        Mfr.#: IRF2907ZLPBF

        OMO.#: OMO-IRF2907ZLPBF

        		 MOSFET MOSFT 75V 170A 4.5mOhm 180nC
        IRF2903ZLPBF

        Mfr.#: IRF2903ZLPBF

        OMO.#: OMO-IRF2903ZLPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 75A TO-262
        IRF2903Z

        Mfr.#: IRF2903Z

        OMO.#: OMO-IRF2903Z-1190

        		 Nuevo y original
        IRF2907ZS-7PPBF

        Mfr.#: IRF2907ZS-7PPBF

        OMO.#: OMO-IRF2907ZS-7PPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 75V 160A D2PAK7
        IRF2907ZSPBF,IRF2907ZS

        Mfr.#: IRF2907ZSPBF,IRF2907ZS

        OMO.#: OMO-IRF2907ZSPBF-IRF2907ZS-1190

        		 Nuevo y original
        IRF2907ZSTRLPBF,IRF2907Z

        Mfr.#: IRF2907ZSTRLPBF,IRF2907Z

        OMO.#: OMO-IRF2907ZSTRLPBF-IRF2907Z-1190

        		 Nuevo y original
        IRF2903ZPBF

        Mfr.#: IRF2903ZPBF

        OMO.#: OMO-IRF2903ZPBF-INFINEON-TECHNOLOGIES

        		 Darlington Transistors MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg
        IRF2903ZSPBF

        Mfr.#: IRF2903ZSPBF

        OMO.#: OMO-IRF2903ZSPBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
        Disponibilidad
        Valores:
        Available
        En orden:
        3000
        Ingrese la cantidad:
        El precio actual de IRF2903ZSPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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