IPT65R10

IPT65R105G7XTMA1 vs IPT65R105G7XTMA1 65R105G7 vs IPT65R105G7

 
PartNumberIPT65R105G7XTMA1IPT65R105G7XTMA1 65R105G7IPT65R105G7
DescriptionMOSFET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSOF-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current24 A--
Rds On Drain Source Resistance105 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge35 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation156 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOS--
PackagingReel--
Height2.4 mm--
Length10.58 mm--
SeriesCoolMOS G7--
Transistor Type1 N-Channel--
Width10.1 mm--
BrandInfineon Technologies--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time68 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesIPT65R105G7 SP001456204--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPT65R105G7XTMA1 MOSFET
IPT65R105G7XTMA1 HIGH POWER_NEW
IPT65R105G7XTMA1 65R105G7 Nuevo y original
IPT65R105G7 Nuevo y original
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