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IPT65R105G7XTMA1

IPT65R105G7XTMA1
Mfr. #:
IPT65R105G7XTMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPT65R105G7XTMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPT65R105G7XTMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSOF-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
24 A
Rds On - Resistencia de la fuente de drenaje:
105 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
35 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
156 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.4 mm
Longitud:
10.58 mm
Serie:
CoolMOS G7
Tipo de transistor:
1 N-Channel
Ancho:
10.1 mm
Marca:
Infineon Technologies
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
68 ns
Tiempo típico de retardo de encendido:
13 ns
Parte # Alias:
IPT65R105G7 SP001456204
Tags
IPT65R10, IPT65R1, IPT65, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 24A 9-Pin(8+Tab) HSOF T/R
***ark
Mosfet, N-Ch, 650V, 24A, 156W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.091Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 650V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW. | Summary of Features: Gives best-in-class FOM R DS(on)*E oss and R DS(on)*Q G; Enables best-in-class R DS(on) in smallest footprint | Benefits: FOM R DS(on)xQ G is 14% better than previous 650V CoolMOS C7 enabling faster switching leading to higher efficiency; Power density trough BIC 33m in 115mm 2 TOLL footprint; Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use; TOLL package is easy to use and has the highest quality standards; Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible | Target Applications: SMPS; Telecom; Server; Solar
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPT65R105G7XTMA1
DISTI # V72:2272_16141107		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant		1872
  • 1000:$2.8580
  • 500:$3.0090
  • 250:$3.1600
  • 100:$3.5110
  • 25:$3.9010
  • 10:$4.9320
  • 1:$6.1380
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1CT-ND		Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1620In Stock
  • 1000:$3.3381
  • 500:$3.9581
  • 100:$4.6495
  • 10:$5.6750
  • 1:$6.3200
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1DKR-ND		Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1620In Stock
  • 1000:$3.3381
  • 500:$3.9581
  • 100:$4.6495
  • 10:$5.6750
  • 1:$6.3200
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1TR-ND		Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$3.0789
IPT65R105G7XTMA1
DISTI # 31348332		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant		2000
  • 2000:$2.7614
IPT65R105G7XTMA1
DISTI # 26196666		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant		1872
  • 3:$6.1380
IPT65R105G7XTMA1
DISTI # SP001456204		Infineon Technologies AGTrans MOSFET N 700V 24A 8-Pin HSOF T/R (Alt: SP001456204)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel		Europe - 2000
  • 20000:€2.4900
  • 12000:€2.6900
  • 8000:€2.7900
  • 4000:€3.0900
  • 2000:€3.8900
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1		Infineon Technologies AGTrans MOSFET N 700V 24A 8-Pin HSOF T/R - Bulk (Alt: IPT65R105G7XTMA1)
Min Qty: 124
Container: Bulk		Americas - 0
  • 1240:$2.4900
  • 620:$2.5900
  • 372:$2.6900
  • 248:$2.7900
  • 124:$2.8900
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1		Infineon Technologies AGTrans MOSFET N 700V 24A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT65R105G7XTMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
    IPT65R105G7XTMA1
    DISTI # 84AC6845    		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, 156W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.091ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes449
    • 1000:$3.1100
    • 500:$3.7000
    • 250:$4.1200
    • 100:$4.3400
    • 50:$4.5700
    • 25:$4.7900
    • 10:$5.0100
    • 1:$5.8900
    IPT65R105G7XTMA1
    DISTI # 726-IPT65R105G7XTMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		3157
    • 1:$5.8300
    • 10:$4.9600
    • 100:$4.3000
    • 250:$4.0800
    • 500:$3.6600
    • 1000:$3.0800
    • 2000:$2.9300
    IPT65R105G7XTMA1Infineon Technologies AGPower Field-Effect Transistor
    RoHS: Not Compliant    		2000
    • 1000:$2.6600
    • 500:$2.8000
    • 100:$2.9100
    • 25:$3.0400
    • 1:$3.2700
    IPT65R105G7XTMA1
    DISTI # 2983375    		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, 156W, HSOF409
    • 500:£2.6600
    • 250:£2.9500
    • 100:£3.1300
    • 10:£3.5900
    • 1:£4.6700
    IPT65R105G7XTMA1
    DISTI # XSKDRABV0021273    		Infineon Technologies AG 
    RoHS: Compliant    		6000 in Stock0 on Order
    • 6000:$3.8600
    • 2000:$4.1400
    IPT65R105G7XTMA1
    DISTI # 2983375    		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, 156W, HSOF
    RoHS: Compliant    		349
    • 1000:$4.4200
    • 500:$4.7700
    • 250:$5.3200
    • 100:$5.6000
    • 10:$6.4700
    • 1:$8.4000
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    Disponibilidad
    Valores:
    Available
    En orden:
    1986
    Ingrese la cantidad:
    El precio actual de IPT65R105G7XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,83 US$
    5,83 US$
    10
    4,96 US$
    49,60 US$
    100
    4,30 US$
    430,00 US$
    250
    4,08 US$
    1 020,00 US$
    500
    3,66 US$
    1 830,00 US$
    1000
    3,08 US$
    3 080,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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