IPT60R1

IPT60R102G7XTMA1 vs IPT60R125G7XTMA1 vs IPT60R150G7XTMA1

 
PartNumberIPT60R102G7XTMA1IPT60R125G7XTMA1IPT60R150G7XTMA1
DescriptionMOSFET HIGH POWER NEWMOSFET HIGH POWER NEWMOSFET HIGH POWER NEW
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseHSOF-8HSOF-8HSOF-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current23 A20 A17 A
Rds On Drain Source Resistance88 mOhms108 mOhms129 mOhms
Vgs th Gate Source Threshold Voltage3 V3 V3 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge34 nC27 nC23 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation141 W120 W106 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesCoolMOS G7CoolMOS G7CoolMOS G7
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time4 ns5 ns6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5 ns5 ns5 ns
Factory Pack Quantity200020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time60 ns60 ns56 ns
Typical Turn On Delay Time18 ns18 ns17 ns
Part # AliasesIPT60R102G7 SP001579318IPT60R125G7 SP001579334IPT60R150G7 SP001579346
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPT60R102G7XTMA1 MOSFET HIGH POWER NEW
IPT60R125G7XTMA1 MOSFET HIGH POWER NEW
IPT60R150G7XTMA1 MOSFET HIGH POWER NEW
IPT60R125G7XTMA1 MOSFET N-CH 650V 20A HSOF-8
IPT60R102G7XTMA1 MOSFET N-CH 650V 23A HSOF-8
IPT60R150G7XTMA1 MOSFET N-CH 650V 17A HSOF-8
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