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IPT60R125G7XTMA1

IPT60R125G7XTMA1
Mfr. #:
IPT60R125G7XTMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPT60R125G7XTMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPT60R125G7XTMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSOF-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
20 A
Rds On - Resistencia de la fuente de drenaje:
108 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
27 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
120 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
CoolMOS G7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
18 ns
Parte # Alias:
IPT60R125G7 SP001579334
Tags
IPT60R1, IPT60, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 20A 9-Pin(8+Tab) HSOF T/R
***ark
Mosfet, N-Ch, 600V, 20A, 120W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.108Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
Parte # Mfg. Descripción Valores Precio
IPT60R125G7XTMA1
DISTI # V72:2272_16563205		Infineon Technologies AGHIGH POWER_NEW0
    IPT60R125G7XTMA1
    DISTI # V36:1790_16563205    		Infineon Technologies AGHIGH POWER_NEW0
    • 2000000:$1.7670
    • 1000000:$1.7690
    • 200000:$1.8910
    • 20000:$2.0860
    • 2000:$2.1180
    IPT60R125G7XTMA1
    DISTI # IPT60R125G7XTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 20A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		74In Stock
    • 1000:$2.2963
    • 500:$2.7227
    • 100:$3.1984
    • 10:$3.9040
    • 1:$4.3500
    IPT60R125G7XTMA1
    DISTI # IPT60R125G7XTMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 20A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		74In Stock
    • 1000:$2.2963
    • 500:$2.7227
    • 100:$3.1984
    • 10:$3.9040
    • 1:$4.3500
    IPT60R125G7XTMA1
    DISTI # IPT60R125G7XTMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 20A HSOF-8
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2000:$2.1179
    IPT60R125G7XTMA1
    DISTI # SP001579334    		Infineon Technologies AGTrans MOSFET N 650V 20A 8-Pin HSOF T/R (Alt: SP001579334)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel    		Europe - 500
    • 20000:€1.5900
    • 12000:€1.7900
    • 8000:€1.8900
    • 4000:€1.9900
    • 2000:€2.0900
    IPT60R125G7XTMA1
    DISTI # IPT60R125G7XTMA1    		Infineon Technologies AGTrans MOSFET N 650V 20A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT60R125G7XTMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 12000:$1.8900
    • 20000:$1.8900
    • 8000:$1.9900
    • 2000:$2.0900
    • 4000:$2.0900
    IPT60R125G7XTMA1
    DISTI # 84AC6843    		Infineon Technologies AGMOSFET, N-CH, 600V, 20A, 120W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2401
    • 1000:$2.1400
    • 500:$2.5400
    • 250:$2.8300
    • 100:$2.9800
    • 50:$3.1300
    • 25:$3.2900
    • 10:$3.4400
    • 1:$4.0500
    IPT60R125G7XTMA1
    DISTI # 726-IPT60R125G7XTMA1    		Infineon Technologies AGMOSFET HIGH POWER NEW
    RoHS: Compliant    		987
    • 1:$4.0100
    • 10:$3.4100
    • 100:$2.9500
    • 250:$2.8000
    • 500:$2.5100
    • 1000:$2.1200
    • 2000:$2.0100
    • 4000:$1.9400
    IPT60R125G7XTMA1
    DISTI # 2983373    		Infineon Technologies AGMOSFET, N-CH, 600V, 20A, 120W, HSOF
    RoHS: Compliant    		2401
    • 1000:$3.0400
    • 500:$3.2900
    • 250:$3.6700
    • 100:$3.8500
    • 10:$4.4500
    • 1:$5.8500
    IPT60R125G7XTMA1
    DISTI # 2983373    		Infineon Technologies AGMOSFET, N-CH, 600V, 20A, 120W, HSOF2408
    • 500:£1.8300
    • 250:£2.0500
    • 100:£2.1600
    • 10:£2.4900
    • 1:£3.2800
    Imagen Parte # Descripción
    10M02SCE144C8G

    Mfr.#: 10M02SCE144C8G

    OMO.#: OMO-10M02SCE144C8G

    		 FPGA - Field Programmable Gate Array non-volatile FPGA, 101 I/O, 144EQFP
    TPSMB480CA-A

    Mfr.#: TPSMB480CA-A

    OMO.#: OMO-TPSMB480CA-A

    		 TVS Diodes / ESD Suppressors 600W 480V AEC-Q101 5% Bi-Directional
    L6564H

    Mfr.#: L6564H

    OMO.#: OMO-L6564H

    		 Power Factor Correction - PFC High Voltage Startup Trans-Mode PFC 700V
    ULN2003ADR

    Mfr.#: ULN2003ADR

    OMO.#: OMO-ULN2003ADR

    		 Darlington Transistors Darlington
    DF08S

    Mfr.#: DF08S

    OMO.#: OMO-DF08S

    		 Bridge Rectifiers 1.5A Bridge
    AD698APZ

    Mfr.#: AD698APZ

    OMO.#: OMO-AD698APZ

    		 Sensor Interface IC LVDT SIGNAL CONDITIONER
    NSR0530HT1G

    Mfr.#: NSR0530HT1G

    OMO.#: OMO-NSR0530HT1G

    		 Schottky Diodes & Rectifiers 0.5 A 30 V SOD-323 S
    875115852001

    Mfr.#: 875115852001

    OMO.#: OMO-875115852001

    		 Aluminum Organic Polymer Capacitors WCAP-PSHP 63V 10uF 20% ESR=45mOhms
    10M02SCE144C8G

    Mfr.#: 10M02SCE144C8G

    OMO.#: OMO-10M02SCE144C8G-INTEL

    		 FPGA - Field Programmable Gate Array non-volatile FPGA, 101 I/O, 144EQFP
    L6564H

    Mfr.#: L6564H

    OMO.#: OMO-L6564H-STMICROELECTRONICS

    		 Power Factor Correction - PFC High Voltage Startup Trans-Mode PFC 700V
    Disponibilidad
    Valores:
    987
    En orden:
    2970
    Ingrese la cantidad:
    El precio actual de IPT60R125G7XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,01 US$
    4,01 US$
    10
    3,41 US$
    34,10 US$
    100
    2,95 US$
    295,00 US$
    250
    2,80 US$
    700,00 US$
    500
    2,51 US$
    1 255,00 US$
    1000
    2,12 US$
    2 120,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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