IPT020

IPT020N10N3ATMA1 vs IPT020N10N3 vs IPT020N10N5ATMA1

 
PartNumberIPT020N10N3ATMA1IPT020N10N3IPT020N10N5ATMA1
DescriptionMOSFET MV POWER MOSMOSFET MV POWER MOSMOSFET
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-HSOF-8HSOF-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current300 A300 A-
Rds On Drain Source Resistance2 mOhms2 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge156 nC156 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReelReel
Height2.4 mm2.4 mm-
Length10.58 mm10.58 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width10.1 mm10.1 mm-
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min125 S125 S-
Fall Time18 ns18 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time58 ns58 ns-
Factory Pack Quantity200020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time84 ns84 ns-
Typical Turn On Delay Time34 ns34 ns-
Part # AliasesIPT020N10N3 SP001100160IPT020N10N3ATMA1 SP001100160IPT020N10N5 SP003883410
Unit Weight0.027263 oz0.002293 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPT020N10N3ATMA1 MOSFET MV POWER MOS
IPT020N10N3 MOSFET MV POWER MOS
IPT020N10N5ATMA1 MOSFET
IPT020N10N3ATMA1 MOSFET N-CH 100V 300A 8HSOF
IPT020N10N Nuevo y original
IPT020N10N3 Trans MOSFET N-CH 100V 300A 8-Pin HSOF T/R (Alt: IPT020N10N3)
IPT020N10N3S Nuevo y original
Top