IPT020N10N3ATMA1

IPT020N10N3ATMA1
Mfr. #:
IPT020N10N3ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET MV POWER MOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPT020N10N3ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-HSOF-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
300 A
Rds On - Resistencia de la fuente de drenaje:
2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
156 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
375 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
2.4 mm
Longitud:
10.58 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
10.1 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
125 S
Otoño:
18 ns
Tipo de producto:
MOSFET
Hora de levantarse:
58 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
84 ns
Tiempo típico de retardo de encendido:
34 ns
Parte # Alias:
IPT020N10N3 SP001100160
Unidad de peso:
0.027263 oz
Tags
IPT020N10N3, IPT020, IPT02, IPT0, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF Infineon IPT020N10N3ATMA1
***ure Electronics
Single N-Channel 100 V 2 mOhm 156 nC OptiMOS™ Power Mosfet - HSOF-8-1
***ical
Trans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF
***et Europe
Trans MOSFET N-CH 100V 300A 8-Pin HSOF T/R
***i-Key
MOSFET N-CH 100V 300A 8HSOF
***ronik
N-CH 100V 300A 2mOhm HSOF-8
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0017Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:375W; No. Of Pins:8Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 300A, HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:375W; Transistor Case Style:HSOF; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 100V, 300A, HSOF-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:300A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0017ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.7V; Dissipazione di Potenza Pd:375W; Modello Case Transistor:HSOF; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The new TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. | Summary of Features: Industrys lowest R DS(on); Highest current capability up to 300A; Very low package parasitics and inductances | Benefits: Less paralleling and cooling required; Highest system reliability; System cost reduction; Enabling very compact design | Target Applications: Forklift; Light electric vehicles (LEV) e.g. e-scooter, e-bikes or -car; Point-of-load (POL); Telecom; efuse
Parte # Mfg. Descripción Valores Precio
IPT020N10N3ATMA1
DISTI # V36:1790_06377693
Infineon Technologies AGTrans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
0
  • 2000000:$3.3680
  • 1000000:$3.3690
  • 200000:$3.4430
  • 20000:$3.5530
  • 2000:$3.5700
IPT020N10N3ATMA1
DISTI # V72:2272_06377693
Infineon Technologies AGTrans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
0
    IPT020N10N3ATMA1
    DISTI # IPT020N10N3ATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 100V 300A 8HSOF
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    On Order
    • 2000:$3.8174
    IPT020N10N3ATMA1
    DISTI # IPT020N10N3ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 100V 300A 8HSOF
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$4.0831
    • 500:$4.6880
    • 100:$5.3837
    • 10:$6.5030
    • 1:$7.2000
    IPT020N10N3ATMA1
    DISTI # IPT020N10N3ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 100V 300A 8HSOF
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$4.0831
    • 500:$4.6880
    • 100:$5.3837
    • 10:$6.5030
    • 1:$7.2000
    IPT020N10N3ATMA1
    DISTI # IPT020N10N3ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 100V 300A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT020N10N3ATMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 20000:$3.4900
    • 12000:$3.5900
    • 8000:$3.6900
    • 4000:$3.7900
    • 2000:$3.9900
    IPT020N10N3ATMA1
    DISTI # SP001100160
    Infineon Technologies AGTrans MOSFET N-CH 100V 300A 8-Pin HSOF T/R (Alt: SP001100160)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel
    Europe - 0
    • 20000:€2.9900
    • 12000:€3.1900
    • 8000:€3.4900
    • 4000:€3.5900
    • 2000:€3.7900
    IPT020N10N3ATMA1
    DISTI # 50Y2079
    Infineon Technologies AGMOSFET Transistor, N Channel, 300 A, 100 V, 0.0017 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
    • 1000:$3.8100
    • 500:$4.3700
    • 250:$4.8000
    • 100:$5.0200
    • 50:$5.4000
    • 25:$5.7900
    • 10:$6.0700
    • 1:$6.7200
    IPT020N10N3ATMA1.
    DISTI # 26AC0496
    Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:300A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:375W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 20000:$3.4900
    • 12000:$3.5900
    • 8000:$3.6900
    • 4000:$3.7900
    • 1:$3.9900
    IPT020N10N3
    DISTI # 726-IPT020N10N3
    Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant
    17
    • 1:$6.6500
    • 10:$6.0100
    • 25:$5.7300
    • 100:$4.9700
    • 250:$4.7500
    • 500:$4.3300
    • 1000:$3.7700
    IPT020N10N3ATMA1
    DISTI # 726-IPT020N10N3ATMA1
    Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant
    5
    • 1:$6.6500
    • 10:$6.0100
    • 25:$5.7300
    • 100:$4.9700
    • 250:$4.7500
    • 500:$4.3300
    • 1000:$3.7700
    IPT020N10N3ATMA1
    DISTI # 2480869
    Infineon Technologies AGMOSFET, N-CH, 100V, 300A, HSOF-80
    • 500:£3.3600
    • 250:£3.7100
    • 100:£3.8700
    • 10:£4.4500
    • 1:£5.7000
    IPT020N10N3ATMA1
    DISTI # 2480869RL
    Infineon Technologies AGMOSFET, N-CH, 100V, 300A, HSOF-8
    RoHS: Compliant
    0
    • 25:$8.6400
    • 10:$9.0600
    • 1:$10.0200
    IPT020N10N3ATMA1
    DISTI # 2480869
    Infineon Technologies AGMOSFET, N-CH, 100V, 300A, HSOF-8
    RoHS: Compliant
    0
    • 25:$8.6400
    • 10:$9.0600
    • 1:$10.0200
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    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de IPT020N10N3ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    6,65 US$
    6,65 US$
    10
    6,01 US$
    60,10 US$
    25
    5,73 US$
    143,25 US$
    100
    4,97 US$
    497,00 US$
    250
    4,75 US$
    1 187,50 US$
    500
    4,33 US$
    2 165,00 US$
    1000
    3,77 US$
    3 770,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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