PartNumber | IPP110N20N3 G | IPP110N20N3 | IPP110N20N3G |
Description | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | |
Manufacturer | Infineon | - | INF |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 88 A | - | - |
Rds On Drain Source Resistance | 9.9 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 87 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Tube | - | - |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 71 S | - | - |
Fall Time | 11 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 26 ns | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 41 ns | - | - |
Typical Turn On Delay Time | 18 ns | - | - |
Part # Aliases | IPP110N20N3GXKSA1 IPP11N2N3GXK SP000677892 | - | - |
Unit Weight | 0.211644 oz | - | - |