 | | | |
| PartNumber | IPP100N08N3GXKSA1 | IPP100N08N3 G | IPP100N08N3GHKSA1 |
| Description | MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 | MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 | MOSFET N-Ch 80V 70A TO220-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
| Id Continuous Drain Current | 70 A | 70 A | 70 A |
| Rds On Drain Source Resistance | 8.4 mOhms | 8.4 mOhms | 9.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 35 nC | 35 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 100 W | 100 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 30 S | 30 S | - |
| Fall Time | 5 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 46 ns | 46 ns | - |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 22 ns | 22 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | G IPP100N08N3 IPP1N8N3GXK SP000680856 | IPP100N08N3GXKSA1 IPP1N8N3GXK SP000680856 | G IPP100N08N3 IPP100N08N3GXK SP000474188 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP100N08S2L07AKSA1 | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | |
| IPP100N08N3GXKSA1 | MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 | ||
| IPP100N08S2L-07 | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | ||
| IPP100N08S2-07 | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | ||
| IPP100N08N3 G | MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 | ||
| IPP100N08N3GXKSA1 | MOSFET N-CH 80V 70A TO220-3 | ||
| IPP100N08S207AKSA1 | MOSFET N-CH 75V 100A TO220-3 | ||
| IPP100N08S2L07AKSA1 | MOSFET N-CH 75V 100A TO220-3 | ||
| IPP100N08N3GHKSA1 | MOSFET N-Ch 80V 70A TO220-3 | ||
Infineon Technologies |
IPP100N08N3GHKSA1 | MOSFET N-Ch 80V 70A TO220-3 | |
| IPP100N08S207AKSA1 | MOSFET N-CHANNEL_75/80V | ||
| IPP100N08S2L07XK | Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IPP100N08S2L07AKSA1) | ||
| IPP100N08N3G | Power Field-Effect Transistor, 70A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP100N08N3G(100N08N) | Nuevo y original | ||
| IPP100N08N3GS | Nuevo y original | ||
| IPP100N08S2L-07 | Darlington Transistors MOSFET N-Ch 75V 100A TO220-3 OptiMOS | ||
| IPP100N08S2-07 | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | ||
| IPP100N08N3 G | IGBT Transistors MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 |