IPP084N06L3

IPP084N06L3 G vs IPP084N06L3 vs IPP084N06L3G

 
PartNumberIPP084N06L3 GIPP084N06L3IPP084N06L3G
DescriptionMOSFET N-Ch 60V 50A TO220-3Power Field-Effect Transistor, 50A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance8.4 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation79 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time37 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPP084N06L3GXKSA1 IPP84N6L3GXK SP000680838--
Unit Weight0.211644 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPP084N06L3 G MOSFET N-Ch 60V 50A TO220-3
IPP084N06L3GXKSA1 MOSFET N-CH 60V 50A TO-220-3
IPP084N06L3GHKSA1 MOSFET N-Ch 60V 50A TO220-3
IPP084N06L3 Nuevo y original
IPP084N06L3G Power Field-Effect Transistor, 50A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP084N06L3G(084N06L) Nuevo y original
IPP084N06L3G,084N06L,IPP Nuevo y original
IPP084N06L3G,IPP084N06L3 Nuevo y original
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