PartNumber | IPP083N10N5AKSA1 | IPP083N10N5 | IPP083N10N5 . |
Description | MOSFET N-Ch 100V 73A TO220-3 | MOSFET DIFFERENTIATED MOSFETS (Alt: IPP083N10N5) | |
Manufacturer | Infineon | Infineon Technologies | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | PG-TO-220-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 73 A | - | - |
Rds On Drain Source Resistance | 8.3 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 30 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 100 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | - | - |
Packaging | Tube | Tube | - |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 5 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 48 S | - | - |
Fall Time | 5 ns | 5 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 5 ns | 5 ns | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 21 ns | 21 ns | - |
Typical Turn On Delay Time | 13 ns | 13 ns | - |
Part # Aliases | IPP083N10N5 SP001226036 | - | - |
Unit Weight | 0.211644 oz | 0.211644 oz | - |
Part Aliases | - | IPP083N10N5 SP001226036 | - |
Package Case | - | TO-220-3 | - |
Pd Power Dissipation | - | 100 W | - |
Vgs Gate Source Voltage | - | +/- 20 V | - |
Id Continuous Drain Current | - | 73 A | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Vgs th Gate Source Threshold Voltage | - | 2.2 V | - |
Rds On Drain Source Resistance | - | 11 mOhms | - |
Qg Gate Charge | - | 30 nC | - |
Forward Transconductance Min | - | 48 S | - |