IPL65R16

IPL65R165CFD vs IPL65R165CFDAUMA1 vs IPL65R165CFDAUMA2

 
PartNumberIPL65R165CFDIPL65R165CFDAUMA1IPL65R165CFDAUMA2
DescriptionMOSFET HIGH POWER_LEGACYMOSFET HIGH POWER_LEGACYMOSFET
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseVSON-4VSON-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current21.3 A21.3 A-
Rds On Drain Source Resistance149 mOhms149 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V3.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge86 nC86 nC-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation195 W195 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOS-
PackagingReelReelReel
SeriesCoolMOS CFD2CoolMOS CFDA-
Transistor Type1 N-Channel1 N-Channel-
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time5.6 ns5.6 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time7.6 ns7.6 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time52.8 ns52.8 ns-
Typical Turn On Delay Time12.4 ns12.4 ns-
Part # AliasesIPL65R165CFDAUMA1 SP000949254IPL65R165CFD SP000949254-
Height-1.1 mm-
Length-8 mm-
Width-8 mm-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPL65R165CFD MOSFET HIGH POWER_LEGACY
IPL65R165CFDAUMA1 MOSFET HIGH POWER_LEGACY
IPL65R165CFDAUMA2 MOSFET
IPL65R165CFDAUMA2 HIGH POWER_LEGACY
IPL65R165CFDAUMA1 MOSFET N-CH 4VSON
IPL65R165CFD MOSFET HIGH POWER_LEGACY
IPL65R165CFD(SP000949254 Nuevo y original
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