PartNumber | IPG16N10S4-61 | IPG16N10S461AATMA1 | IPG16N10S461ATMA1 |
Description | MOSFET MOSFET | MOSFET N-CHANNEL_100+ | MOSFET MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 2 Channel | 1 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | 100 V |
Id Continuous Drain Current | 16 A | - | 16 A |
Rds On Drain Source Resistance | 53 mOhms, 53 mOhms | - | 53 mOhms, 53 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - | 2 V |
Vgs Gate Source Voltage | 20 V | - | 20 V |
Qg Gate Charge | 7 nC, 7 nC | - | 7 nC, 7 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 29 W | - | 29 W |
Configuration | Dual | Single | Dual |
Channel Mode | Enhancement | - | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Series | XPG16N10 | - | IPG16N10 |
Transistor Type | 2 N-Channel | 1 N-Channel | 2 N-Channel |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 5 ns, 5 ns | - | 5 ns, 5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 1 ns, 1 ns | - | 1 ns, 1 ns |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 5 ns, 5 ns | - | 5 ns, 5 ns |
Typical Turn On Delay Time | 3 ns, 3 ns | - | 3 ns, 3 ns |
Part # Aliases | IPG16N10S461ATMA1 IPG16N1S461XT SP000892972 | IPG16N10S4-61A SP001091952 | IPG16N10S4-61 IPG16N1S461XT SP000892972 |
Unit Weight | 0.003527 oz | - | 0.003383 oz |