IPD80R4K

IPD80R4K5P7ATMA1 vs IPD80R4K5P7ATMA1-CUT TAPE vs IPD80R4K5P7

 
PartNumberIPD80R4K5P7ATMA1IPD80R4K5P7ATMA1-CUT TAPEIPD80R4K5P7
DescriptionMOSFET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current1.5 A--
Rds On Drain Source Resistance4.5 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge4 nC--
Minimum Operating Temperature- 50 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation13 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS P7--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time80 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPD80R4K5P7 SP001422632--
Unit Weight0.011993 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPD80R4K5P7ATMA1 MOSFET
IPD80R4K5P7ATMA1 MOSFET N-CH 800V 1.5A DPAK
IPD80R4K5P7ATMA1-CUT TAPE Nuevo y original
IPD80R4K5P7 Nuevo y original
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