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IPD80R4K5P7ATMA1

IPD80R4K5P7ATMA1
Mfr. #:
IPD80R4K5P7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD80R4K5P7ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPD80R4K5P7ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
1.5 A
Rds On - Resistencia de la fuente de drenaje:
4.5 Ohms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
4 nC
Temperatura mínima de funcionamiento:
- 50 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
13 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
CoolMOS P7
Ancho:
6.22 mm
Marca:
Infineon Technologies
Otoño:
80 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
15 ns
Parte # Alias:
IPD80R4K5P7 SP001422632
Unidad de peso:
0.011993 oz
Tags
IPD80R4K, IPD80R4, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 4.5 Ohm 4 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 800V, 1.5A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):3.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Parte # Mfg. Descripción Valores Precio
IPD80R4K5P7ATMA1
DISTI # V72:2272_16563311		Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R2295
  • 1000:$0.2834
  • 500:$0.3147
  • 250:$0.3497
  • 100:$0.3653
  • 25:$0.5256
  • 10:$0.6312
  • 1:$0.7608
IPD80R4K5P7ATMA1
DISTI # V36:1790_16563311		Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R0
  • 2500000:$0.2197
  • 1250000:$0.2200
  • 250000:$0.2421
  • 25000:$0.2807
  • 2500:$0.2871
IPD80R4K5P7ATMA1
DISTI # IPD80R4K5P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 1.5A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPD80R4K5P7ATMA1
    DISTI # IPD80R4K5P7ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 800V 1.5A DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPD80R4K5P7ATMA1
      DISTI # IPD80R4K5P7ATMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 800V 1.5A DPAK
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.2871
      IPD80R4K5P7ATMA1
      DISTI # 32638869      		Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R2500
      • 2500:$0.2363
      IPD80R4K5P7ATMA1
      DISTI # 32004576      		Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R2295
      • 27:$0.7608
      IPD80R4K5P7ATMA1
      DISTI # IPD80R4K5P7ATMA1      		Infineon Technologies AGTrans MOSFET N 800V 1.5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R4K5P7ATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 25000:$0.2389
      • 15000:$0.2429
      • 10000:$0.2519
      • 5000:$0.2609
      • 2500:$0.2709
      IPD80R4K5P7ATMA1
      DISTI # SP001422632      		Infineon Technologies AGTrans MOSFET N 800V 1.5A 3-Pin TO-252 T/R (Alt: SP001422632)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.2599
      • 15000:€0.2809
      • 10000:€0.3119
      • 5000:€0.3499
      • 2500:€0.4129
      IPD80R4K5P7ATMA1
      DISTI # 34AC1690      		Infineon Technologies AGMOSFET, N-CH, 800V, 1.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:1.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):3.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes1789
      • 1000:$0.3050
      • 500:$0.3310
      • 250:$0.3560
      • 100:$0.3820
      • 50:$0.4510
      • 25:$0.5210
      • 10:$0.5910
      • 1:$0.7070
      IPD80R4K5P7ATMA1
      DISTI # 726-IPD80R4K5P7ATMA1      		Infineon Technologies AGMOSFET
      RoHS: Compliant      		6542
      • 1:$0.7000
      • 10:$0.5850
      • 100:$0.3780
      • 1000:$0.3020
      IPD80R4K5P7ATMA1
      DISTI # 1300909P      		Infineon Technologies AGMOSFET N-CH 800V 1.5A COOLMOS P7 TO-252, RL2490
      • 2500:£0.2110
      • 1000:£0.2430
      • 500:£0.2770
      • 50:£0.3380
      IPD80R4K5P7ATMA1
      DISTI # IPD80R4K5P7      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,1A,13W,PG-TO252-34
      • 500:$0.3600
      • 100:$0.3900
      • 25:$0.4300
      • 5:$0.5300
      • 1:$0.6300
      IPD80R4K5P7ATMA1
      DISTI # 2781178      		Infineon Technologies AGMOSFET, N-CH, 800V, 1.5A, TO-252
      RoHS: Compliant      		1789
      • 5000:$0.3810
      • 1000:$0.4020
      • 500:$0.4250
      • 250:$0.4910
      • 100:$0.5820
      • 25:$0.7120
      • 5:$0.8190
      IPD80R4K5P7ATMA1
      DISTI # 2781178      		Infineon Technologies AGMOSFET, N-CH, 800V, 1.5A, TO-2522009
      • 500:£0.2500
      • 250:£0.2690
      • 100:£0.2880
      • 10:£0.4930
      • 1:£0.6110
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      Disponibilidad
      Valores:
      Available
      En orden:
      1989
      Ingrese la cantidad:
      El precio actual de IPD80R4K5P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,70 US$
      0,70 US$
      10
      0,58 US$
      5,85 US$
      100
      0,38 US$
      37,80 US$
      1000
      0,30 US$
      302,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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