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| PartNumber | IPD65R250E6XT | IPD65R250E6XTMA1INFINEON | IPD65R250E6XTMA1 |
| Description | Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD65R250E6XTMA1) | RF Bipolar Transistors MOSFET N-Ch 700V 16.1A DPAK-2 | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | IPD65R250 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPD65R250E6 IPD65R250E6XT SP000898656 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 208 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 9 ns |
| Rise Time | - | - | 9 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 16.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 230 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 76 ns |
| Typical Turn On Delay Time | - | - | 11 ns |
| Qg Gate Charge | - | - | 45 nC |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| IPD65R250E6XT | Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD65R250E6XTMA1) | ||
| IPD65R250E6XTMA1INFINEON | Nuevo y original | ||
Infineon Technologies |
IPD65R250E6XTMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 16.1A DPAK-2 |