IPD65R250E6XTMA1

Mfr. #:: IPD65R250E6XTMA1
Fabricante:: Infineon Technologies
Descripción:: RF Bipolar Transistors MOSFET N-Ch 700V 16.1A DPAK-2
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPD65R250E6XTMA1 Ficha de datos
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Fabricante: Infineon Technologies

categoria de producto: Transistores - FET, MOSFET - Sencillo

Serie: IPD65R250

embalaje: Carrete

Alias de parte: IPD65R250E6 IPD65R250E6XT SP000898656

Unidad de peso: 0.139332 oz

Estilo de montaje: SMD / SMT

Nombre comercial: CoolMOS

Paquete-Estuche: TO-252-3

Tecnología: Si

Número de canales: 1 Channel

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 208 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 9 ns

Hora de levantarse: 9 ns

Vgs-Puerta-Fuente-Voltaje: 30 V

Id-corriente-de-drenaje-continua: 16.1 A

Vds-Drain-Source-Breakdown-Voltage: 700 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Resistencia a la fuente de desagüe de Rds: 230 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 76 ns

Tiempo de retardo de encendido típico: 11 ns

Qg-Gate-Charge: 45 nC

Tags: IPD65R250E6X, IPD65R250E, IPD65R25, IPD65R2, IPD65R, IPD65, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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IPD65R250E6XTMA1 Descripción

***ure Electronics: Single N-Channel 650 V 250 mOhm 45 nC CoolMOS Power Mosfet - TO-252-3

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 650V, 16.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 16.1A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 208W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS E6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPD65R250E6XTMA1 DISTI # V72:2272_06378496	Infineon Technologies AG	Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD65R250E6XTMA1 DISTI # V36:1790_06378496	Infineon Technologies AG	Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD65R250E6XTMA1 DISTI # IPD65R250E6XTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$1.3505
IPD65R250E6XTMA1 DISTI # IPD65R250E6XTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5In Stock	1:$3.0400
IPD65R250E6XTMA1 DISTI # IPD65R250E6XTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD65R250E6XT DISTI # IPD65R250E6XTMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD65R250E6XTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	15000:$1.0900 25000:$1.0900 5000:$1.1900 10000:$1.1900 2500:$1.2900
IPD65R250E6XTMA1 DISTI # 13AC9048	Infineon Technologies AG	MOSFET, N-CH, 650V, 16.1A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:16.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	1000:$1.3200 500:$1.6100 250:$1.7200 100:$1.8300 50:$1.9800 25:$2.1400 10:$2.2900 1:$2.7000
IPD65R250E6 DISTI # 726-IPD65R250E6	Infineon Technologies AG	MOSFET N-Ch 700V 16.1A DPAK-2 RoHS: Compliant	400	1:$2.6700 10:$2.2700 100:$1.8100 500:$1.5900 1000:$1.3100 2500:$1.2200
IPD65R250E6XTMA1 DISTI # 726-IPD65R250E6XTMA1	Infineon Technologies AG	MOSFET N-Ch 700V 16.1A DPAK-2 RoHS: Compliant	0
IPD65R250E6XTMA1 DISTI # 2726055	Infineon Technologies AG	MOSFET, N-CH, 650V, 16.1A, TO-252-3 RoHS: Compliant	4480	1:$4.8400
IPD65R250E6XTMA1 DISTI # 2726055	Infineon Technologies AG	MOSFET, N-CH, 650V, 16.1A, TO-252-3 RoHS: Compliant	4512	500:£1.1600 250:£1.2400 100:£1.3200 10:£1.6600 1:£2.3300

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: IPD65R250C6XTMA1 OMO.#: OMO-IPD65R250C6XTMA1	MOSFET N-Ch 700V 16.1A DPAK-2
	Mfr.#: IPD65R250E6. OMO.#: OMO-IPD65R250E6--1190	Nuevo y original
	Mfr.#: IPD65R250E6 65E6250 OMO.#: OMO-IPD65R250E6-65E6250-1190	Nuevo y original
	Mfr.#: IPD65R250E6XT OMO.#: OMO-IPD65R250E6XT-1190	Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD65R250E6XTMA1)
	Mfr.#: IPD65R250C6 , 2SD2402-EX OMO.#: OMO-IPD65R250C6-2SD2402-EX-1190	Nuevo y original
	Mfr.#: IPD65R250C6S OMO.#: OMO-IPD65R250C6S-1190	Nuevo y original
	Mfr.#: IPD65R250E6 OMO.#: OMO-IPD65R250E6-1190	MOSFET N-Ch 700V 16.1A DPAK-2 (Alt: SP000898656)
	Mfr.#: IPD65R250E6XTMA1INFINEON OMO.#: OMO-IPD65R250E6XTMA1INFINEON-1190	Nuevo y original
	Mfr.#: IPD65R250C6XTMA1 OMO.#: OMO-IPD65R250C6XTMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 700V 16.1A DPAK-2
	Mfr.#: IPD65R250E6XTMA1 OMO.#: OMO-IPD65R250E6XTMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 700V 16.1A DPAK-2

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El precio actual de IPD65R250E6XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,59 US$~~; ~~1,59 US$~~

10: ~~1,51 US$~~; ~~15,09 US$~~

100: ~~1,43 US$~~; ~~142,97 US$~~

500: ~~1,35 US$~~; ~~675,10 US$~~

1000: ~~1,27 US$~~; ~~1 270,80 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPD65R250E6XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes