IPD640

IPD640N06L G vs IPD640N06L vs IPD640N06LG

 
PartNumberIPD640N06L GIPD640N06LIPD640N06LG
DescriptionMOSFET N-Ch 60V 18A DPAK-2
ManufacturerInfineon10INFINEONINF
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance64 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation47 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 2IPD640N06-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Fall Time32 ns32 ns-
Product TypeMOSFET--
Rise Time25 ns25 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns32 ns-
Typical Turn On Delay Time6 ns6 ns-
Part # AliasesIPD640N06LGBTMA1 IPD64N6LGXT SP000443766--
Unit Weight0.139332 oz0.139332 oz-
Part Aliases-IPD640N06LGBTMA1 IPD640N06LGXT SP000443766-
Package Case-TO-252-3-
Pd Power Dissipation-47 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-18 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-64 mOhms-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPD640N06L G MOSFET N-Ch 60V 18A DPAK-2
IPD640N06LGBTMA1 MOSFET N-CH 60V 18A TO-252
IPD640N06LGXT Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD640N06LGBTMA1)
IPD640N06L Nuevo y original
IPD640N06LG Nuevo y original
IPD640N06L G IGBT Transistors MOSFET N-Ch 60V 18A DPAK-2
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