PartNumber | IPD640N06L G | IPD640N06L | IPD640N06LG |
Description | MOSFET N-Ch 60V 18A DPAK-2 | ||
Manufacturer | Infineon | 10INFINEON | INF |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 18 A | - | - |
Rds On Drain Source Resistance | 64 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 47 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | OptiMOS 2 | IPD640N06 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 32 ns | 32 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 25 ns | 25 ns | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 32 ns | 32 ns | - |
Typical Turn On Delay Time | 6 ns | 6 ns | - |
Part # Aliases | IPD640N06LGBTMA1 IPD64N6LGXT SP000443766 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Part Aliases | - | IPD640N06LGBTMA1 IPD640N06LGXT SP000443766 | - |
Package Case | - | TO-252-3 | - |
Pd Power Dissipation | - | 47 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 18 A | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Rds On Drain Source Resistance | - | 64 mOhms | - |