IPD64

IPD640N06L G vs IPD64CN10N G vs IPD640N06LGBTMA1

 
PartNumberIPD640N06L GIPD64CN10N GIPD640N06LGBTMA1
DescriptionMOSFET N-Ch 60V 18A DPAK-2MOSFET N-Ch 100V 17A DPAK-2MOSFET N-CH 60V 18A TO-252
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V100 V-
Id Continuous Drain Current18 A17 A-
Rds On Drain Source Resistance64 mOhms64 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation47 W44 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOS--
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesOptiMOS 2--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time32 ns2 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns3 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns9 ns-
Typical Turn On Delay Time6 ns7 ns-
Part # AliasesIPD640N06LGBTMA1 IPD64N6LGXT SP000443766IPD64CN10NGXT-
Unit Weight0.139332 oz0.139332 oz-
Moisture Sensitive-Yes-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPD640N06L G MOSFET N-Ch 60V 18A DPAK-2
IPD64CN10N G MOSFET N-CH 100V 17A TO252-3
IPD640N06LGBTMA1 MOSFET N-CH 60V 18A TO-252
Infineon Technologies
Infineon Technologies
IPD64CN10N G MOSFET N-Ch 100V 17A DPAK-2
IPD640N06LGXT Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD640N06LGBTMA1)
IPD640N06L Nuevo y original
IPD640N06LG Nuevo y original
IPD64CN10N G Nuevo y original
IPD64CN10NG Nuevo y original
IPD640N06L G IGBT Transistors MOSFET N-Ch 60V 18A DPAK-2
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