 | |  | |
| PartNumber | IPD60R750E6 6R750E6 | IPD60R750E6 | IPD60R750E6ATMA1 |
| Description | IGBT Transistors MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6 | RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2 | |
| Manufacturer | - | INFINEON | Infineon Technologies |
| Product Category | - | IC Chips | Transistors - FETs, MOSFETs - Single |
| Series | - | CoolMOS E6 | - |
| Packaging | - | Reel | Reel |
| Part Aliases | - | IPD60R750E6BTMA1 IPD60R750E6XT SP000801094 | IPD60R750E6 SP001117728 |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Tradename | - | CoolMOS | CoolMOS |
| Package Case | - | TO-252-3 | TO-252-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 48 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 5.7 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | 600 V |
| Rds On Drain Source Resistance | - | 680 mOhms | - |
| Transistor Polarity | - | N-Channel | N-Channel |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| IPD60R750E6 6R750E6 | Nuevo y original | ||
| IPD60R750E6 | IGBT Transistors MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6 | ||
Infineon Technologies |
IPD60R750E6BTMA1 | MOSFET N-CH 600V 5.7A TO252 | |
| IPD60R750E6ATMA1 | RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2 |