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IPD60R750E6ATMA1

IPD60R750E6ATMA1
Mfr. #:
IPD60R750E6ATMA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R750E6ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
IPD60R750E6 SP001117728
Nombre comercial
CoolMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Vds-Drain-Source-Breakdown-Voltage
600 V
Polaridad del transistor
Canal N
Tags
IPD60R7, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Parte # Mfg. Descripción Valores Precio
IPD60R750E6ATMA1
DISTI # V72:2272_06384542		Infineon Technologies AGTrans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		294
  • 75000:$0.5069
  • 30000:$0.5118
  • 15000:$0.5167
  • 6000:$0.5215
  • 3000:$0.5264
  • 1000:$0.5294
  • 500:$0.6727
  • 250:$0.7503
  • 100:$0.7808
  • 50:$0.9464
  • 25:$0.9960
  • 10:$1.0511
  • 1:$1.3558
IPD60R750E6ATMA1
DISTI # IPD60R750E6ATMA1-ND		Infineon Technologies AGMOSFET N-CH 600V 5.7A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD60R750E6ATMA1
    DISTI # 26195490    		Infineon Technologies AGTrans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		294
    • 15000:$0.5487
    • 6000:$0.5573
    • 3000:$0.5659
    • 1000:$0.5691
    • 500:$0.7232
    • 250:$0.8066
    • 100:$0.8394
    • 50:$1.0174
    • 25:$1.0707
    • 13:$1.1299
    IPD60R750E6ATMA1
    DISTI # 22AC4485    		Infineon Technologies AGMOSFET, N-CH, 5.7A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:5.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.68ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1607
    • 1000:$0.5730
    • 500:$0.7250
    • 250:$0.7730
    • 100:$0.8210
    • 50:$0.9040
    • 25:$0.9870
    • 10:$1.0700
    • 1:$1.2500
    IPD60R750E6ATMA1
    DISTI # 726-IPD60R750E6ATMA1    		Infineon Technologies AGMOSFET N-Ch 650V 5.7A DPAK-2
    RoHS: Compliant    		903
    • 1:$1.2400
    • 10:$1.0600
    • 100:$0.8130
    • 500:$0.7180
    • 1000:$0.5670
    • 2500:$0.5030
    • 10000:$0.4840
    IPD60R750E6ATMA1
    DISTI # 2764859    		Infineon Technologies AGMOSFET, N-CH, 5.7A, 600V, TO-252
    RoHS: Compliant    		1607
    • 100:$1.1700
    • 25:$1.4300
    • 5:$1.6400
    IPD60R750E6ATMA1
    DISTI # 2764859    		Infineon Technologies AGMOSFET, N-CH, 5.7A, 600V, TO-2521840
    • 500:£0.5640
    • 250:£0.6020
    • 100:£0.6390
    • 25:£0.8330
    • 5:£0.9250
    Imagen Parte # Descripción
    IPD60R750E6 6R750E6

    Mfr.#: IPD60R750E6 6R750E6

    OMO.#: OMO-IPD60R750E6-6R750E6-1190

    		 Nuevo y original
    IPD60R750E6BTMA1

    Mfr.#: IPD60R750E6BTMA1

    OMO.#: OMO-IPD60R750E6BTMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 5.7A TO252
    IPD60R750E6

    Mfr.#: IPD60R750E6

    OMO.#: OMO-IPD60R750E6-126

    		 IGBT Transistors MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6
    IPD60R750E6ATMA1

    Mfr.#: IPD60R750E6ATMA1

    OMO.#: OMO-IPD60R750E6ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de IPD60R750E6ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,73 US$
    0,73 US$
    10
    0,69 US$
    6,90 US$
    100
    0,65 US$
    65,34 US$
    500
    0,62 US$
    308,55 US$
    1000
    0,58 US$
    580,80 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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