 | | | |
| PartNumber | IPD50N06S4L08ATMA2 | IPD50N06S4L08ATMA1 | IPD50N06S4L12ATMA1 |
| Description | MOSFET MOSFET | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | IPD50N06 | XPD50N06 | XPD50N06 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPD50N06S4L-08 IPD5N6S4L8XT SP001028664 | IPD50N06S4L-08 IPD50N06S4L08XT SP000374322 | IPD50N06S4L-12 IPD50N06S4L12XT SP000476422 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
| Id Continuous Drain Current | - | 50 A | 50 A |
| Rds On Drain Source Resistance | - | 6.3 mOhms | 9.6 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | - | 16 V | 16 V |
| Qg Gate Charge | - | 64 nC | 40 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 71 W | 50 W |
| Channel Mode | - | Enhancement | Enhancement |
| Fall Time | - | 8 ns | 5 ns |
| Rise Time | - | 2 ns | 2 ns |
| Typical Turn Off Delay Time | - | 45 ns | 25 ns |
| Typical Turn On Delay Time | - | 9 ns | 6 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD50N06S4L08ATMA2 | MOSFET MOSFET | |
| IPD50N06S4L12ATMA2 | MOSFET MOSFET | ||
| IPD50N06S4L12ATMA2 | MOSFET N-CH 60V 50A TO252-3 | ||
| IPD50N06S4L08ATMA2 | MOSFET N-CH 60V 50A TO252-3 | ||
| IPD50N06S4L08ATMA1 | MOSFET N-CH 60V 50A TO252-3 | ||
| IPD50N06S4L12ATMA1 | MOSFET N-CH 60V 50A TO252-3-11 | ||
Infineon Technologies |
IPD50N06S4L08ATMA1 | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | |
| IPD50N06S4L12ATMA1 | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | ||
| IPD50N06S4L-08 | Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252 | ||
| IPD50N06S4L-12 . | Nuevo y original | ||
| IPD50N06S4L-12 4N06L12 | Nuevo y original | ||
| IPD50N06S4L-12(SP0010286 | Nuevo y original | ||
| IPD50N06S4L-12 | IGBT Transistors MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 |