PartNumber | IPD50N06S409ATMA2 | IPD50N06S409ATMA1 | IPD50N06S4L08ATMA1 |
Description | MOSFET MOSFET | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Configuration | Single | Single | Single |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Series | IPD50N06 | XPD50N06 | XPD50N06 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPD50N06S4-09 IPD5N6S49XT SP001028662 | IPD50N06S4-09 IPD50N06S409XT SP000374321 | IPD50N06S4L-08 IPD50N06S4L08XT SP000374322 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
Id Continuous Drain Current | - | 50 A | 50 A |
Rds On Drain Source Resistance | - | 7.1 mOhms | 6.3 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V | 1.2 V |
Vgs Gate Source Voltage | - | 20 V | 16 V |
Qg Gate Charge | - | 47 nC | 64 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 71 W | 71 W |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | 5 ns | 8 ns |
Rise Time | - | 40 ns | 2 ns |
Typical Turn Off Delay Time | - | 20 ns | 45 ns |
Typical Turn On Delay Time | - | 15 ns | 9 ns |