IPD50

IPD50R500CEAUMA1 vs IPD50R3K0CEBTMA1 vs IPD50R500CEATMA1

 
PartNumberIPD50R500CEAUMA1IPD50R3K0CEBTMA1IPD50R500CEATMA1
DescriptionMOSFET CONSUMERMOSFET N-Ch 500V 1.7A DPAK-2MOSFET N-Ch 550V 24A DPAK-2
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Vds Drain Source Breakdown Voltage500 V500 V-
TradenameCoolMOSCoolMOS-
PackagingReelReelReel
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesCoolMOS CEIPD50R3XPD50R500
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Moisture SensitiveYes--
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPD50R500CE SP001396792IPD50R3K0CEBTMA1 SP000992074-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Id Continuous Drain Current-2.6 A-
Rds On Drain Source Resistance-2.7 Ohms-
Vgs th Gate Source Threshold Voltage-2.5 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-4.3 nC-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-26 W-
Configuration-SingleSingle
Channel Mode-Enhancement-
Transistor Type-1 N-Channel1 N-Channel
Fall Time-49 ns12 ns
Rise Time-5.8 ns5 ns
Typical Turn Off Delay Time-23 ns30 ns
Typical Turn On Delay Time-7.3 ns6 ns
Part Aliases--IPD50R500CE SP001117704
Package Case--TO-252-3
Pd Power Dissipation--57 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--24 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--500 mOhms
Qg Gate Charge--18.7 nC
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPD50R500CEAUMA1 MOSFET CONSUMER
IPD50R520CPATMA1 MOSFET LOW POWER_LEGACY
IPD50R520CPATMA1 LOW POWER_LEGACY
IPD50R520CPBTMA1 LOW POWER_LEGACY
IPD50R650CEAUMA1 Trans MOSFET N-CH 500V 6.1A 3-Pin(2+Tab) DPAK T/R
IPD50R500CEAUMA1 MOSFET N-CH 550V 7.6A TO252
IPD50R500CEBTMA1 MOSFET N-CH 500V 7.6A PG-TO252
IPD50R520CP MOSFET N-CH 550V 7.1A TO-252
IPD50R650CEBTMA1 MOSFET N CH 500V 6.1A PG-TO252
IPD50R800CEATMA1 MOSFET N CH 500V 5A TO252
IPD50R800CEAUMA1 Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) DPAK T/R
IPD50R950CEATMA1 MOSFET N-CH 500V 4.3A PG-T0252
IPD50R950CEAUMA1 Trans MOSFET N-CH 500V 4.3A T/R
IPD50R950CEBTMA1 MOSFET N-CH 500V 4.3A PG-TO252
IPD50R500CEATMA1 MOSFET N-Ch 550V 24A DPAK-2
IPD50R650CEATMA1 MOSFET N-Ch 550V 19A DPAK-2
IPD50R800CEBTMA1 IGBT Transistors MOSFET N-Ch 550V 5A DPAK-2
IPD50R3K0CEBTMA1 IGBT Transistors MOSFET N-Ch 500V 1.7A DPAK-2
Infineon Technologies
Infineon Technologies
IPD50R800CEBTMA1 MOSFET N-Ch 500V 5A DPAK-2
IPD50R950CEBTMA1 MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE
IPD50R950CEAUMA1 MOSFET CONSUMER
IPD50R500CEBTMA1 MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE
IPD50R520CP MOSFET N-Ch 550V 7.1A DPAK-2 CoolMOS CP
IPD50R800CEATMA1 MOSFET CONSUMER
IPD50R650CEBTMA1 MOSFET N-Ch 500V 6.1A DPAK-2
IPD50R650CEATMA1 MOSFET N-Ch 550V 19A DPAK-2
IPD50R3K0CEBTMA1 , 2SD22 Nuevo y original
IPD50R3K0CEBTMA1074 - Bulk (Alt: IPD50R3K0CEBTMA1074)
IPD50R500CEBTMA1 , 2SD22 Nuevo y original
IPD50R650CEBTMA1 , 2SD22 Nuevo y original
IPD50R800CEATMA1 , 2SD22 Nuevo y original
IPD50R800CEBTMA1 , 2SD22 Nuevo y original
IPD50R950CE STK830D Nuevo y original
IPD50R950CEATMA1 , 2SD22 Nuevo y original
IPD50R950CEBTMA1 , 2SD22 Nuevo y original
IPD50R500CE MOSFET N-Ch 500V 24A DPAK-2
IPD50R800CE MOSFET N-Ch 500V 5A DPAK-2
IPD50R650CE Trans MOSFET N-CH 500(Min)V 6.1A 3-Pin TO-252 T/R - Bulk (Alt: IPD50R650CE)
IPD50R950CE MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE
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