IPD1

IPD12CN10NGATMA1 vs IPD127N06LGBTMA1 vs IPD12CN10NGBUMA1

 
PartNumberIPD12CN10NGATMA1IPD127N06LGBTMA1IPD12CN10NGBUMA1
DescriptionMOSFET MV POWER MOSMOSFET MV POWER MOSMOSFET N-CH 100V 67A TO252-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current67 A--
Rds On Drain Source Resistance9.3 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge65 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min39 S--
Fall Time8 ns--
Product TypeMOSFETMOSFET-
Rise Time21 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time17 ns--
Part # AliasesG IPD12CN10N SP001127806G IPD127N06L IPD127N6LGXT SP000443740-
Unit Weight0.139332 oz0.139332 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPD135N03LGATMA1 MOSFET N-Ch 30V 30A DPAK-2
IPD12CN10NGATMA1 MOSFET MV POWER MOS
IPD135N08N3GATMA1 MOSFET MV POWER MOS
IPD135N03L G MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3
IPD135N03LGBTMA1 LV POWER MOS
IPD12CNE8N G MOSFET N-CH 85V 67A TO252-3
IPD12N03LB G MOSFET N-CH 30V 30A TO-252
IPD127N06LGBTMA1 MOSFET N-CH 60V 50A TO-252
IPD12CN10NGATMA1 MOSFET N-CH 100V 67A TO252-3
IPD12CN10NGBUMA1 MOSFET N-CH 100V 67A TO252-3
IPD135N03LGATMA1 MOSFET N-CH 30V 30A TO252-3
IPD135N03LGXT MOSFET N-CH 30V 30A TO252-3
IPD135N08N3GATMA1 MOSFET N-CH 80V 45A
IPD135N08N3GBTMA1 MOSFET N-CH 80V 45A TO252-3
IPD13N03LA G MOSFET N-CH 25V 30A DPAK
Infineon Technologies
Infineon Technologies
IPD135N03LGBTMA1 MOSFET LV POWER MOS
IPD127N06LGBTMA1 MOSFET MV POWER MOS
IPD13N03LA G MOSFET N-Ch 25V 30A DPAK-2
IPD127N06LG POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0127OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
IPD127N06LGXT Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD127N06LGBTMA1)
IPD12C10N G Nuevo y original
IPD12CN10N Infineon N-Channel Power MOSFET IPD12CN10N G - TO252-3
IPD12CN10NG Trans MOSFET N-CH 100V 67A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD12CN10NG)
IPD12CN10NGATMA1 , 2SD20 Nuevo y original
IPD12CN10NGBUMA1 , 2SD21 Nuevo y original
IPD12CNE8N Nuevo y original
IPD12CNE8NG Nuevo y original
IPD12N03 Nuevo y original
IPD12N03L 30 A, 30 V, 0.0147 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
IPD12N03LAG Nuevo y original
IPD12N03LB Nuevo y original
IPD12N03LBG Nuevo y original
IPD12S016PW Nuevo y original
IPD135N03 Nuevo y original
IPD135N03L Nuevo y original
IPD135N03L G Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
IPD135N03L,135N03L,IPD13 Nuevo y original
IPD135N03LG Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD135N08N Nuevo y original
IPD135N08N3 G MOSFET N-Ch 80V 45A DPAK-2 OptiMOS 3
IPD135N08N3G Trans MOSFET N-CH 80V 45A 3-Pin TO-252 T/R (Alt: IPD135N08N3 G)
IPD135N08N3GBTMA1 , 2SD2 Nuevo y original
IPD13N03LA 30 A, 25 V, 0.0128 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
IPD13N03LA G Nuevo y original
IPD13N03LA P Nuevo y original
IPD13N03LAG Nuevo y original
IPD13N03LAG(13N03LA) Nuevo y original
IPD13N03LAGXT Nuevo y original
IPD13N03LAGXT/BKN Nuevo y original
IPD12CN10N G MOSFET N-Ch 100V 67A DPAK-2 OptiMOS 2
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