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IPD135N03LGATMA1

IPD135N03LGATMA1
Mfr. #:
IPD135N03LGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 30A TO252-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD135N03LGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPD135N03LG, IPD135N03L, IPD135N03, IPD135, IPD13, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 13.5 mOhm 6.4 nC OptiMOS™ Power Mosfet - TO-252-3
***p One Stop Japan
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
***ical
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK
***et
Trans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R
***Components
MOSFET N-Channel 30V 30A OptiMOS3 TO252
***an P&S
30V,30A,N Channel Power MOSFET
***ark
MOSFET, N CHANNEL, 30V, 30A, TO-252
***i-Key
MOSFET N-CH 30V 35A TO252-3
***ronik
N-CH 30V 30A 14mOhm TO252-3 RoHSconf
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 30A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:31W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:30A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***nell
MOSFET, CANALE N, 30A, 30V, PG-TO252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0113ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:31W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:30A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:20V; Tipo di Transistor:Power MOSFET
Parte # Mfg. Descripción Valores Precio
IPD135N03LGATMA1
DISTI # V72:2272_06391086		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		743
  • 500:$0.3279
  • 250:$0.3305
  • 100:$0.3646
  • 25:$0.5550
  • 10:$0.6183
  • 1:$0.7395
IPD135N03LGATMA1
DISTI # V36:1790_06391086		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.2127
  • 1250000:$0.2130
  • 250000:$0.2345
  • 25000:$0.2718
  • 2500:$0.2780
IPD135N03LGATMA1
DISTI # IPD135N03LGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6819In Stock
  • 1000:$0.3160
  • 500:$0.3950
  • 100:$0.4996
  • 10:$0.6520
  • 1:$0.7400
IPD135N03LGATMA1
DISTI # IPD135N03LGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6819In Stock
  • 1000:$0.3160
  • 500:$0.3950
  • 100:$0.4996
  • 10:$0.6520
  • 1:$0.7400
IPD135N03LGATMA1
DISTI # IPD135N03LGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 25000:$0.2429
  • 12500:$0.2492
  • 5000:$0.2588
  • 2500:$0.2780
IPD135N03LGATMA1
DISTI # 33651457		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		743
  • 25:$0.7395
IPD135N03LGATMA1
DISTI # SP000796912		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R (Alt: SP000796912)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2119
  • 15000:€0.2289
  • 10000:€0.2479
  • 5000:€0.2699
  • 2500:€0.3309
IPD135N03LGXT
DISTI # IPD135N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD135N03LGATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2319
  • 15000:$0.2359
  • 10000:$0.2439
  • 5000:$0.2529
  • 2500:$0.2629
IPD135N03LGATMA1
DISTI # 50Y2027		Infineon Technologies AGMOSFET Transistor, N Channel, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V RoHS Compliant: Yes1195
  • 1000:$0.2960
  • 500:$0.3210
  • 250:$0.3450
  • 100:$0.3700
  • 50:$0.4370
  • 25:$0.5050
  • 10:$0.5730
  • 1:$0.6870
IPD135N03LGATMA1
DISTI # 726-IPD135N03LGATMA1		Infineon Technologies AGMOSFET N-Ch 30V 30A DPAK-2
RoHS: Compliant		8485
  • 1:$0.6800
  • 10:$0.5670
  • 100:$0.3660
  • 1000:$0.2930
  • 2500:$0.2470
  • 10000:$0.2380
  • 25000:$0.2290
IPD135N03LGATMA1
DISTI # IPD135N03LGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,21A,31W,PG-TO252-32500
  • 500:$0.2703
  • 100:$0.2905
  • 25:$0.3345
  • 5:$0.3784
  • 1:$0.5608
IPD135N03LGATMA1
DISTI # 2480822		Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-31835
  • 500:£0.2240
  • 250:£0.2550
  • 100:£0.2860
  • 10:£0.4880
  • 1:£0.6060
IPD135N03LGATMA1
DISTI # 2480822RL		Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-3
RoHS: Compliant		0
  • 1000:$0.4770
  • 500:$0.5960
  • 100:$0.7530
  • 10:$0.9830
  • 1:$1.1200
IPD135N03LGATMA1
DISTI # 2480822		Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-3
RoHS: Compliant		1485
  • 1000:$0.4770
  • 500:$0.5960
  • 100:$0.7530
  • 10:$0.9830
  • 1:$1.1200
Imagen Parte # Descripción
IPD135N08N3GATMA1

Mfr.#: IPD135N08N3GATMA1

OMO.#: OMO-IPD135N08N3GATMA1

 MOSFET MV POWER MOS
IPD135N03L G

Mfr.#: IPD135N03L G

OMO.#: OMO-IPD135N03L-G

 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3
IPD135N03LGBTMA1

Mfr.#: IPD135N03LGBTMA1

OMO.#: OMO-IPD135N03LGBTMA1-INFINEON-TECHNOLOGIES

 LV POWER MOS
IPD135N03L

Mfr.#: IPD135N03L

OMO.#: OMO-IPD135N03L-1190

 Nuevo y original
IPD135N03L G

Mfr.#: IPD135N03L G

OMO.#: OMO-IPD135N03L-G-1190

 Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
IPD135N03LG

Mfr.#: IPD135N03LG

OMO.#: OMO-IPD135N03LG-1190

 Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD135N03LGXT

Mfr.#: IPD135N03LGXT

OMO.#: OMO-IPD135N03LGXT-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 30A TO252-3
IPD135N08N

Mfr.#: IPD135N08N

OMO.#: OMO-IPD135N08N-1190

 Nuevo y original
IPD135N08N3GBTMA1

Mfr.#: IPD135N08N3GBTMA1

OMO.#: OMO-IPD135N08N3GBTMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V 45A TO252-3
IPD135N08N3GBTMA1 , 2SD2

Mfr.#: IPD135N08N3GBTMA1 , 2SD2

OMO.#: OMO-IPD135N08N3GBTMA1-2SD2-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de IPD135N03LGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,32 US$
0,32 US$
10
0,30 US$
3,02 US$
100
0,29 US$
28,59 US$
500
0,27 US$
135,00 US$
1000
0,25 US$
254,20 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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