IPB65R6

IPB65R660CFDA vs IPB65R660CFDAATMA1 vs IPB65R600C6ATMA1

 
PartNumberIPB65R660CFDAIPB65R660CFDAATMA1IPB65R600C6ATMA1
DescriptionMOSFET N-Ch 650V 6A D2PAK-2MOSFET N-Ch 650V 6A D2PAK-2MOSFET N-CH 650V 7.3A TO263
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current6 A6 A-
Rds On Drain Source Resistance594 mOhms594 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V3.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge20 nC20 nC-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation62.5 W62.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesCoolMOSCoolMOS CFDA-
Transistor Type1 N-Channel1 N-Channel-
BrandInfineon / IRInfineon / IR-
Fall Time10 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns8 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns40 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesIPB65R660CFDAATMA1 IPB65R66CFDAXT SP000875794IPB65R660CFDA IPB65R66CFDAXT SP000875794-
Unit Weight0.077603 oz0.068654 oz-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IPB65R660CFDA MOSFET N-Ch 650V 6A D2PAK-2
IPB65R660CFDAATMA1 MOSFET N-Ch 650V 6A D2PAK-2
Infineon Technologies
Infineon Technologies
IPB65R600C6ATMA1 MOSFET N-CH 650V 7.3A TO263
IPB65R660CFDATMA1 MOSFET N-CH 650V 6A TO263
IPB65R660CFDAATMA1 RF Bipolar Transistors MOSFET N-Ch 650V 6A D2PAK-2
IPB65R660CFDAXT Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB65R660CFDAATMA1)
IPB65R600C6 65C6600 Nuevo y original
IPB65R660CFD MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2
IPB65R660CFDA MOSFET N-Ch 650V 6A D2PAK-2
IPB65R600C6 Darlington Transistors MOSFET N-Ch 700V 7.3A D2PAK-2 CoolMOS C6
Top