PartNumber | IPB65R660CFDA | IPB65R660CFDAATMA1 | IPB65R600C6ATMA1 |
Description | MOSFET N-Ch 650V 6A D2PAK-2 | MOSFET N-Ch 650V 6A D2PAK-2 | MOSFET N-CH 650V 7.3A TO263 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 6 A | 6 A | - |
Rds On Drain Source Resistance | 594 mOhms | 594 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 20 nC | 20 nC | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 62.5 W | 62.5 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Series | CoolMOS | CoolMOS CFDA | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Infineon / IR | Infineon / IR | - |
Fall Time | 10 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | 8 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 40 ns | 40 ns | - |
Typical Turn On Delay Time | 9 ns | 9 ns | - |
Part # Aliases | IPB65R660CFDAATMA1 IPB65R66CFDAXT SP000875794 | IPB65R660CFDA IPB65R66CFDAXT SP000875794 | - |
Unit Weight | 0.077603 oz | 0.068654 oz | - |