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| PartNumber | IPB029N06N3GATMA1 | IPB029N06N3GE8187ATMA1 |
| Description | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 60V 120A D2PAK-2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 120 A | 120 A |
| Rds On Drain Source Resistance | 2.3 mOhms | 2.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 165 nC | 53 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 188 W | 188 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | - |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 3 | IPB029N06 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 75 S | - |
| Fall Time | 20 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 120 ns | - |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 62 ns | - |
| Typical Turn On Delay Time | 35 ns | - |
| Part # Aliases | G IPB029N06N3 IPB29N6N3GXT SP000453052 | E8187 G IPB029N06N3 IPB29N6N3GE8187XT SP000939334 |
| Unit Weight | 0.139332 oz | 0.068654 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB029N06N3GATMA1 | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | |
| IPB029N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB029N06N3GE8187ATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
Infineon Technologies |
IPB029N06N3GE8187ATMA1 | MOSFET N-Ch 60V 120A D2PAK-2 | |
| IPB029N06N | Nuevo y original | ||
| IPB029N06N3 G | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | ||
| IPB029N06N3G | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453052) |