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| PartNumber | IPB021N06N3 | IPB021N06N3G | IPB021N06N3 G |
| Description | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IGBT Transistors MOSFET N-Ch 60V 120A D2PAK-2 | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | IPB021N06 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB021N06N3GATMA1 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 250 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 24 ns |
| Rise Time | - | - | 80 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 2.1 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 79 ns |
| Typical Turn On Delay Time | - | - | 41 ns |
| Qg Gate Charge | - | - | 206 nC |
| Forward Transconductance Min | - | - | 184 S 92 S |
| Channel Mode | - | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| IPB021N06N3 | Nuevo y original | ||
| IPB021N06N3G | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB021N06N3 G | IGBT Transistors MOSFET N-Ch 60V 120A D2PAK-2 | ||
Infineon Technologies |
IPB021N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 |