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| PartNumber | IPA80R650CEXKSA2 | IPA80R650CEXKSA1 |
| Description | MOSFET CONSUMER | MOSFET CONSUMER |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 |
| Vds Drain Source Breakdown Voltage | 650 V | 800 V |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Tube | Tube |
| Height | 16.15 mm | 16.15 mm |
| Length | 10.65 mm | 10.65 mm |
| Series | CoolMOS CE | CoolMOS CE |
| Width | 4.85 mm | 4.85 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPA80R650CE SP001313394 | IPA80R650CE SP001286432 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Id Continuous Drain Current | - | 8 A |
| Rds On Drain Source Resistance | - | 560 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2.1 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 45 nC |
| Minimum Operating Temperature | - | - 40 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 33 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Fall Time | - | 10 ns |
| Rise Time | - | 15 ns |
| Typical Turn Off Delay Time | - | 72 ns |
| Typical Turn On Delay Time | - | 25 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA80R650CEXKSA2 | MOSFET CONSUMER | |
| IPA80R650CEXKSA2 | MOSFET N-CH 800V TO-220-3 | ||
| IPA80R650CEXKSA1 | MOSFET CONSUMER | ||
Infineon Technologies |
IPA80R650CEXKSA1 | MOSFET CONSUMER | |
| IPA80R650CE | Trans MOSFET N-CH 800V 4.5A 3-Pin TO-220FP Tube (Alt: IPA80R650CE) | ||
| IPA80R650CEXKSA1 , 2SD18 | Nuevo y original |