PartNumber | IPA80R650CEXKSA2 | IPA80R650CEXKSA1 | IPA80R600P7XKSA1 |
Description | MOSFET CONSUMER | MOSFET CONSUMER | MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220FP-3 | TO-220FP-3 | PG-TO-220FP-3 |
Vds Drain Source Breakdown Voltage | 650 V | 800 V | 800 V |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 16.15 mm | 16.15 mm | - |
Length | 10.65 mm | 10.65 mm | - |
Series | CoolMOS CE | CoolMOS CE | CoolMOS P7 |
Width | 4.85 mm | 4.85 mm | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPA80R650CE SP001313394 | IPA80R650CE SP001286432 | IPA80R600P7 SP001644604 |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.078248 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Id Continuous Drain Current | - | 8 A | 8 A |
Rds On Drain Source Resistance | - | 560 mOhms | 510 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2.1 V | 2.5 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 45 nC | 20 nC |
Minimum Operating Temperature | - | - 40 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 33 W | 28 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 10 ns | 10 ns |
Rise Time | - | 15 ns | 8 ns |
Typical Turn Off Delay Time | - | 72 ns | 40 ns |
Typical Turn On Delay Time | - | 25 ns | 8 ns |