PartNumber | IKQ50N120CT2XKSA1 | IKQ50N120CH3XKSA1 |
Description | IGBT Transistors IGBT PRODUCTS | IGBT Transistors IGBT PRODUCTS |
Manufacturer | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y |
Technology | Si | Si |
Package / Case | TO247-3-46 | TO-247-3 |
Mounting Style | Through Hole | Through Hole |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V |
Collector Emitter Saturation Voltage | 1.75 V | 2 V |
Maximum Gate Emitter Voltage | 20 V | 20 V |
Continuous Collector Current at 25 C | 100 A | 100 A |
Pd Power Dissipation | 652 W | 652 W |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Packaging | Tube | Tube |
Continuous Collector Current Ic Max | 100 A | 100 A |
Brand | Infineon Technologies | Infineon Technologies |
Gate Emitter Leakage Current | 100 nA | 100 nA |
Product Type | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 240 | 240 |
Subcategory | IGBTs | IGBTs |
Part # Aliases | IKQ50N120CT2 SP001272736 | IKQ50N120CH3 SP001272708 |
Unit Weight | 0.211644 oz | 0.211644 oz |
Moisture Sensitive | - | Yes |