IKQ50N120CT2XKSA1

IKQ50N120CT2XKSA1
Mfr. #:
IKQ50N120CT2XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT PRODUCTS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKQ50N120CT2XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO247-3-46
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.75 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
100 A
Pd - Disipación de energía:
652 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
100 A
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Parte # Alias:
IKQ50N120CT2 SP001272736
Unidad de peso:
0.211644 oz
Tags
IKQ5, IKQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKQ50N120CT2XKSA1 P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 1200V 100A 652000mW 3-Pin(3+Tab) TO-247 Tube
***ronik
IGBT 1200V 50A 1,75V TO247-3
***i-Key
IGBT 1200V 100A TO247-3-46
***et
IGBT PRODUCTS
***ark
Igbt, 1.2Kv, 100A, 652W, To-247; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:652W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 1.2KV, 100A, 652W, TO-247; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:652W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, 1.2KV, 100A, 652W, TO-247; Corrente di Collettore CC:100A; Tensione Saturaz Collettore-Emettitore Vce(on):1.75V; Dissipazione di Potenza Pd:652W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Motor control; Industrial drives; Other low speed hard switching applications (f sw <20kHz)
Parte # Mfg. Descripción Valores Precio
IKQ50N120CT2XKSA1
DISTI # IKQ50N120CT2XKSA1-ND
Infineon Technologies AGIGBT 1200V 100A TO247-3-46
RoHS: Compliant
Min Qty: 1
Container: Tube
146In Stock
  • 720:$8.4663
  • 240:$9.5173
  • 25:$10.8020
  • 10:$11.2690
  • 1:$12.2600
IKQ50N120CT2XKSA1
DISTI # IKQ50N120CT2XKSA1
Infineon Technologies AGIGBTs - Rail/Tube (Alt: IKQ50N120CT2XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$6.9900
  • 1440:$7.0900
  • 960:$7.3900
  • 480:$7.6900
  • 240:$7.9900
IKQ50N120CT2XKSA1
DISTI # SP001272736
Infineon Technologies AGIGBTs (Alt: SP001272736)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€5.7900
  • 500:€6.1900
  • 100:€6.3900
  • 50:€6.6900
  • 25:€6.8900
  • 10:€7.1900
  • 1:€7.8900
IKQ50N120CT2XKSA1
DISTI # 93AC7070
Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:652W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes173
  • 500:$8.1400
  • 250:$8.7000
  • 100:$9.1500
  • 50:$9.7700
  • 25:$10.3800
  • 10:$10.8400
  • 1:$11.7900
IKQ50N120CT2XKSA1
DISTI # 726-IKQ50N120CT2XKSA
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
442
  • 1:$11.6700
  • 10:$10.7300
  • 25:$10.2800
  • 100:$9.0600
  • 250:$8.6100
  • 500:$8.0600
IKQ50N120CT2XKSA1
DISTI # 1623284
Infineon Technologies AGIGBT 1200V 50A TRENCHSTOP2 DIODE TO-247, TU194
  • 600:£5.7910
  • 300:£6.2050
  • 150:£6.6820
  • 30:£7.2390
IKQ50N120CT2XKSA1
DISTI # IKQ50N120CT2
Infineon Technologies AGTransistor: IGBT,1.2kV,50A,151W,TO247-3477
  • 30:$8.6000
  • 10:$9.2200
  • 3:$10.2600
  • 1:$11.6100
IKQ50N120CT2XKSA1
DISTI # 2986435
Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247165
  • 100:£6.5600
  • 50:£7.0100
  • 10:£7.4600
  • 5:£8.4500
  • 1:£8.9700
IKQ50N120CT2XKSA1
DISTI # 2986435
Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247
RoHS: Compliant
163
  • 250:$10.4900
  • 100:$10.5900
  • 50:$11.8100
  • 10:$12.6300
  • 5:$13.1000
  • 1:$13.5900
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Mfr.#: C2M0040120D

OMO.#: OMO-C2M0040120D-WOLFSPEED

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LM2937IMPX-15/NOPB

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OMO.#: OMO-LM2937IMPX-15-NOPB-TEXAS-INSTRUMENTS

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OMO.#: OMO-SCT50N120-STMICROELECTRONICS

MOSFET N-CH 1.2KV TO247-3
Disponibilidad
Valores:
442
En orden:
2425
Ingrese la cantidad:
El precio actual de IKQ50N120CT2XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
11,67 US$
11,67 US$
10
10,73 US$
107,30 US$
25
10,28 US$
257,00 US$
100
9,06 US$
906,00 US$
250
8,61 US$
2 152,50 US$
500
8,06 US$
4 030,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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