FQP6N80

FQP6N80C vs FQP6N80

 
PartNumberFQP6N80CFQP6N80
DescriptionMOSFET 800V N-Ch Q-FET advance C-SeriesMOSFET 800V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V
Id Continuous Drain Current5.5 A5.8 A
Rds On Drain Source Resistance2.5 Ohms1.95 Ohms
Vgs Gate Source Voltage30 V30 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation158 W158 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameQFET-
PackagingTubeTube
Height16.3 mm16.3 mm
Length10.67 mm10.67 mm
SeriesFQP6N80CFQP6N80
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width4.7 mm4.7 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min5.4 S5.9 S
Fall Time44 ns45 ns
Product TypeMOSFETMOSFET
Rise Time65 ns70 ns
Factory Pack Quantity100050
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time47 ns65 ns
Typical Turn On Delay Time26 ns30 ns
Part # AliasesFQP6N80C_NL-
Unit Weight0.063493 oz0.063493 oz
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP6N80C MOSFET 800V N-Ch Q-FET advance C-Series
FQP6N80 MOSFET 800V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQP6N80 MOSFET N-CH 800V 5.8A TO-220
FQP6N80C MOSFET N-CH 800V 5.5A TO-220
FQP6N80,FQP6N80C Nuevo y original
FQP6N80C,6N80C, Nuevo y original
FQP6N80C,6N80C,FQP6N80,6 Nuevo y original
FQP6N80C,6N80C,FQP6N80,6N80 Nuevo y original
FQP6N80C,6N80C,FQP6N80,6N80, Nuevo y original
FQP6N80C,FQP8N80C Nuevo y original
FQP6N80C,FQPF6N80C,6N80C Nuevo y original
FQP6N80C,FQPF6N80C,6N80C,6N80, Nuevo y original
FQP6N80C-TU Nuevo y original
FQP6N80C/FQP12N60C Nuevo y original
FQP6N80C/FQP4N90C Nuevo y original
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