FQP6N80

FQP6N80
Mfr. #:
FQP6N80
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 800V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQP6N80 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
5.8 A
Rds On - Resistencia de la fuente de drenaje:
1.95 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
158 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FQP6N80
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
5.9 S
Otoño:
45 ns
Tipo de producto:
MOSFET
Hora de levantarse:
70 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
65 ns
Tiempo típico de retardo de encendido:
30 ns
Unidad de peso:
0.063493 oz
Tags
FQP6N8, FQP6N, FQP6, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 800V 5.8A 3-Pin(3+Tab) TO-220AB Rail
***i-Key
MOSFET N-CH 800V 5.8A TO-220
***ser
MOSFETs 800V N-Channel QFET
***inecomponents.com
800V N-Channel QFET®
***ark
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.8A; Resistance, Rds On:1.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
***ment14 APAC
Prices include import duty and tax. MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:158W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:SOT-78B; Current Id Max:5.8A; On State Resistance Max:1.95ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:23.2A; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***nell
MOSFET, N, TO-220; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:5.8A; Napięcie drenu / źródła Vds:800V; Rezystancja przewodzenia Rds(on):1.95ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:5V; Straty mocy Pd:158W; Rodzaj obudowy tranzystora:TO-220; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (15-Jan-2018); Maks. prąd Id:5.8A; Napięcie Vds, typ.:800V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs th, maks.:5V; Napięcie Vgs, maks.:30V; Prąd impulsowy Idm:23.2A; Rezystancja w stanie włączenia, maks.:1.95ohm; Temperatura robocza, min.:-55°C; Typ obudowy alternatywnej:SOT-78B; Zakres temperatury roboczej:-55°C do +150°C
Parte # Mfg. Descripción Valores Precio
FQP6N80C
DISTI # V99:2348_06359226
ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail978
  • 1000:$0.7355
  • 500:$0.8216
  • 100:$0.9417
  • 10:$1.1332
  • 1:$1.1442
FQP6N80C
DISTI # V79:2366_17791905
ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail510
  • 1000:$0.7355
  • 500:$0.8216
  • 100:$0.9417
  • 10:$1.1332
  • 1:$1.1442
FQP6N80C
DISTI # FQP6N80C-ND
ON SemiconductorMOSFET N-CH 800V 5.5A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
655In Stock
  • 1000:$1.0532
  • 500:$1.2711
  • 100:$1.6342
  • 10:$2.0340
  • 1:$2.2500
FQP6N80
DISTI # FQP6N80-ND
ON SemiconductorMOSFET N-CH 800V 5.8A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    FQP6N80C
    DISTI # 26992975
    ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail2790
    • 10000:$0.7141
    • 6000:$0.7324
    • 4000:$0.7410
    • 2000:$0.7516
    • 1000:$0.7564
    FQP6N80C
    DISTI # 26882808
    ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail978
    • 500:$0.8216
    • 100:$0.9417
    • 10:$1.1332
    • 8:$1.1442
    FQP6N80C
    DISTI # 26117645
    ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail510
    • 500:$0.8216
    • 100:$0.9417
    • 23:$1.1332
    FQP6N80C
    DISTI # FQP6N80C
    ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP6N80C)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 1
    • 1000:$0.7879
    • 2000:$0.7829
    • 4000:$0.7719
    • 6000:$0.7629
    • 10000:$0.7439
    FQP6N80C
    DISTI # FQP6N80C
    ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP6N80C)
    RoHS: Compliant
    Min Qty: 1000
    Asia - 3000
    • 1000:$0.7355
    • 2000:$0.7072
    • 3000:$0.6810
    • 5000:$0.6567
    • 10000:$0.6341
    • 25000:$0.6129
    • 50000:$0.6029
    FQP6N80C
    DISTI # FQP6N80C
    ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP6N80C)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1:€1.2479
    • 10:€1.1089
    • 25:€0.9979
    • 50:€0.9069
    • 100:€0.8319
    • 500:€0.7679
    • 1000:€0.7129
    FQP6N80C.
    DISTI # 23AC5320
    Fairchild Semiconductor CorporationQF 800V 1.95OHM TO220 ROHS COMPLIANT: YES1
    • 1:$1.6700
    • 10:$1.4300
    • 100:$1.1600
    • 500:$1.0200
    • 1000:$0.8630
    • 5000:$0.8530
    • 10000:$0.8520
    FQP6N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 5.8A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    12522
    • 1000:$0.9200
    • 500:$0.9700
    • 100:$1.0100
    • 25:$1.0500
    • 1:$1.1300
    FQP6N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    131000
    • 1000:$0.9900
    • 500:$1.0400
    • 100:$1.0800
    • 25:$1.1300
    • 1:$1.2200
    FQP6N80
    DISTI # 512-FQP6N80
    ON SemiconductorMOSFET 800V N-Channel QFET
    RoHS: Compliant
    0
      FQP6N80C
      DISTI # 512-FQP6N80C
      ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
      RoHS: Compliant
      792
      • 1:$1.6000
      • 10:$1.3600
      • 100:$1.0900
      • 500:$0.9480
      • 1000:$0.7850
      FQP6N80CON SemiconductorN-Channel 800 V 2.5 Ohm Through Hole Mosfet - TO-220
      RoHS: Compliant
      750Tube
      • 10:$1.1500
      • 100:$1.0200
      • 500:$0.8600
      FQP6N80Fairchild Semiconductor Corporation5.8 A, 800 V, 1.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB9
        FQP6N80CFairchild Semiconductor Corporation5.5 A, 800 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB42
        • 21:$1.0040
        • 4:$1.2550
        • 1:$1.5060
        FQP6N80C
        DISTI # 6715161
        ON SemiconductorMOSFET N-CHANNEL 800V 5.5A TO220AB, PK915
        • 5:£1.2120
        • 25:£1.1160
        • 100:£1.0940
        • 250:£1.0720
        • 500:£0.9860
        FQP6N80C
        DISTI # FQP6N80C
        ON SemiconductorTransistor: N-MOSFET,unipolar,800V,3.2A,158W,TO220AB67
        • 1:$1.4000
        • 5:$1.2000
        • 25:$0.9700
        • 100:$0.8800
        • 500:$0.8100
        FQP6N80C
        DISTI # XSFP00000011547
        Fairchild Semiconductor Corporation 
        RoHS: Compliant
        841
        • 100:$2.3000
        • 841:$2.0900
        FQP6N80C
        DISTI # 1095071
        ON SemiconductorMOSFET, N, TO-220
        RoHS: Compliant
        873
        • 5:£1.2700
        • 25:£1.0400
        • 100:£0.8330
        • 250:£0.7790
        • 500:£0.7250
        FQP6N80C
        DISTI # C1S541901481906
        ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Tube
        RoHS: Compliant
        510
        • 500:$0.8216
        • 100:$0.9417
        • 10:$1.1332
        FQP6N80C
        DISTI # C1S226600572064
        ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Tube
        RoHS: Compliant
        978
        • 500:$0.8216
        • 100:$0.9417
        • 10:$1.1332
        FQP6N80
        DISTI # 9845674
        ON SemiconductorMOSFET, N, TO-220
        RoHS: Compliant
        0
        • 1:$3.1200
        • 25:$2.6200
        • 100:$1.8900
        • 250:$1.5900
        • 500:$1.3300
        • 1000:$1.2500
        FQP6N80C
        DISTI # 1095071
        ON SemiconductorMOSFET, N, TO-220
        RoHS: Compliant
        843
        • 1:$2.5400
        • 10:$2.1600
        • 100:$1.7300
        • 500:$1.5100
        • 1000:$1.2400
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        Darlington Transistors MOSFET 60V N-Channel QFET
        Disponibilidad
        Valores:
        Available
        En orden:
        3500
        Ingrese la cantidad:
        El precio actual de FQP6N80 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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