 | | | |
| PartNumber | FQI4N20 | FQI4N20L | FQI4N20TM |
| Description | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| Manufacturer | FSC | - | - |
| Product Category | FETs - Single | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQI4N20TU | MOSFET | |
| FQI4N20 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| FQI4N20L | Nuevo y original | ||
| FQI4N20TM | Nuevo y original | ||
| FQI4N20TUFSC | Nuevo y original | ||
ON Semiconductor |
FQI4N20LTU | MOSFET N-CH 200V 3.8A I2PAK | |
| FQI4N20TU | MOSFET N-CH 200V 3.6A I2PAK |