FQD12P10TM

FQD12P10TM-F085 vs FQD12P10TM vs FQD12P10TM-AS004

 
PartNumberFQD12P10TM-F085FQD12P10TMFQD12P10TM-AS004
DescriptionMOSFET P-CH/100V/Q-FETMOSFET P-CH 100V 9.4A DPAKMOSFET P-CH/100V/12A/Q-FET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current9.4 A--
Rds On Drain Source Resistance290 mOhms--
ConfigurationSingle--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
Transistor Type1 P-Channel--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesFQD12P10TM_F085--
Unit Weight0.009184 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD12P10TM-F085 MOSFET P-CH/100V/Q-FET
ON Semiconductor
ON Semiconductor
FQD12P10TM MOSFET P-CH 100V 9.4A DPAK
FQD12P10TM-F085 MOSFET P-CH 100V 9.4A DPAK
FQD12P10TM-NL Nuevo y original
FQD12P10TM_F085 MOSFET P-CH/100V/Q-FET
FQD12P10TM_AS004 RF Bipolar Transistors MOSFET P-CH/100V/12A/Q-FET
FQD12P10TM-AS004 MOSFET P-CH/100V/12A/Q-FET
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