FQD12P10T

FQD12P10TM-F085 vs FQD12P10TF vs FQD12P10TM

 
PartNumberFQD12P10TM-F085FQD12P10TFFQD12P10TM
DescriptionMOSFET P-CH/100V/Q-FETMOSFET 100V P-Channel QFETMOSFET P-CH 100V 9.4A DPAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current9.4 A9.4 A-
Rds On Drain Source Resistance290 mOhms290 mOhms-
ConfigurationSingleSingle-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
Transistor Type1 P-Channel1 P-Channel-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesFQD12P10TM_F085--
Unit Weight0.009184 oz0.139332 oz-
Vgs Gate Source Voltage-30 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-2.5 W-
Channel Mode-Enhancement-
Type-MOSFET-
Forward Transconductance Min-6.3 S-
Fall Time-60 ns-
Rise Time-160 ns-
Typical Turn Off Delay Time-35 ns-
Typical Turn On Delay Time-15 ns-
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD12P10TM-F085 MOSFET P-CH/100V/Q-FET
FQD12P10TF MOSFET 100V P-Channel QFET
ON Semiconductor
ON Semiconductor
FQD12P10TF MOSFET P-CH 100V 9.4A DPAK
FQD12P10TM MOSFET P-CH 100V 9.4A DPAK
FQD12P10TM-F085 MOSFET P-CH 100V 9.4A DPAK
FQD12P10TF_NB82105 Nuevo y original
FQD12P10TM-NL Nuevo y original
FQD12P10TM_F085 MOSFET P-CH/100V/Q-FET
FQD12P10TM_AS004 RF Bipolar Transistors MOSFET P-CH/100V/12A/Q-FET
FQD12P10TM-AS004 MOSFET P-CH/100V/12A/Q-FET
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