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| PartNumber | FQA6N90C-F109 |
| Description | MOSFET 900V N-Ch Q-FET advance C-Series |
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-3PN-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V |
| Id Continuous Drain Current | 6 A |
| Rds On Drain Source Resistance | 2.3 Ohms |
| Vgs Gate Source Voltage | 30 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 198 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | QFET |
| Packaging | Tube |
| Height | 20.1 mm |
| Length | 16.2 mm |
| Series | FQA6N90C_F109 |
| Transistor Type | 1 N-Channel |
| Width | 5 mm |
| Brand | ON Semiconductor / Fairchild |
| Fall Time | 60 ns |
| Product Type | MOSFET |
| Rise Time | 90 ns |
| Factory Pack Quantity | 450 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 55 ns |
| Typical Turn On Delay Time | 35 ns |
| Part # Aliases | FQA6N90C_F109 |
| Unit Weight | 0.225789 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQA6N90C-F109 | MOSFET 900V N-Ch Q-FET advance C-Series | |
ON Semiconductor |
FQA6N90C-F109 | MOSFET N-CH 900V 6A TO-3P |