FQA6N

FQA6N90 vs FQA6N100 vs FQA6N80C

 
PartNumberFQA6N90FQA6N100FQA6N80C
DescriptionMOSFET 900V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current3.87 A--
Rds On Drain Source Resistance1.93 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation198 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.5 S--
Fall Time55 ns--
Product TypeMOSFET--
Rise Time80 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.000198 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQA6N90C-F109 MOSFET 900V N-Ch Q-FET advance C-Series
FQA6N90 MOSFET 900V N-Channel QFET
FQA6N100 Nuevo y original
FQA6N80C Nuevo y original
FQA6N90C - Bulk (Alt: FQA6N90C)
FQA6N90C,6N90C,FQA6N90, Nuevo y original
FQA6N90C,FQA16N50,16N50, Nuevo y original
FQA6N90C,FQA16N50,16N50,6N90C,FQA6N90, Nuevo y original
FQA6N90C,FQA6N90 Nuevo y original
FQA6N90C,FQA6N90,6N90C, Nuevo y original
FQA6N90C_F109 Darlington Transistors MOSFET 900V N-Ch Q-FET advance C-Series
ON Semiconductor
ON Semiconductor
FQA6N70 MOSFET N-CH 700V 6.4A TO-3P
FQA6N80 MOSFET N-CH 800V 6.3A TO-3P
FQA6N80_F109 MOSFET N-CH 800V 6.3A TO-3P
FQA6N90 MOSFET N-CH 900V 6.4A TO-3P
FQA6N90C-F109 MOSFET N-CH 900V 6A TO-3P
FQA6N90_F109 MOSFET N-CH 900V 6.4A TO-3P
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