FQA6N9

FQA6N90C-F109 vs FQA6N90 vs FQA6N90_F109

 
PartNumberFQA6N90C-F109FQA6N90FQA6N90_F109
DescriptionMOSFET 900V N-Ch Q-FET advance C-SeriesMOSFET 900V N-Channel QFETMOSFET N-CH 900V 6.4A TO-3P
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3PN-3TO-3PN-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage900 V900 V-
Id Continuous Drain Current6 A3.87 A-
Rds On Drain Source Resistance2.3 Ohms1.93 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation198 W198 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height20.1 mm20.1 mm-
Length16.2 mm16.2 mm-
SeriesFQA6N90C_F109--
Transistor Type1 N-Channel1 N-Channel-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time60 ns55 ns-
Product TypeMOSFETMOSFET-
Rise Time90 ns80 ns-
Factory Pack Quantity45030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time55 ns95 ns-
Typical Turn On Delay Time35 ns35 ns-
Part # AliasesFQA6N90C_F109--
Unit Weight0.225789 oz0.000198 oz-
Type-MOSFET-
Forward Transconductance Min-5.5 S-
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQA6N90C-F109 MOSFET 900V N-Ch Q-FET advance C-Series
FQA6N90 MOSFET 900V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQA6N90 MOSFET N-CH 900V 6.4A TO-3P
FQA6N90C-F109 MOSFET N-CH 900V 6A TO-3P
FQA6N90_F109 MOSFET N-CH 900V 6.4A TO-3P
FQA6N90C - Bulk (Alt: FQA6N90C)
FQA6N90C,6N90C,FQA6N90, Nuevo y original
FQA6N90C,FQA16N50,16N50, Nuevo y original
FQA6N90C,FQA16N50,16N50,6N90C,FQA6N90, Nuevo y original
FQA6N90C,FQA6N90 Nuevo y original
FQA6N90C,FQA6N90,6N90C, Nuevo y original
FQA6N90C_F109 Darlington Transistors MOSFET 900V N-Ch Q-FET advance C-Series
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