PartNumber | FQA10N80C-F109 | FQA10N80 | FQA10N80C |
Description | MOSFET 800V N-Ch QFET Advance | MOSFET 800V N-Channel QFET | MOSFET N-CH 800V 10A TO-3P |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-3PN-3 | TO-3PN-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
Id Continuous Drain Current | 10 A | 9.8 A | - |
Rds On Drain Source Resistance | 1.1 Ohms | 1.05 Ohms | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 240 W | 240 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | QFET | - | - |
Packaging | Tube | Tube | - |
Height | 20.1 mm | 20.1 mm | - |
Length | 16.2 mm | 16.2 mm | - |
Series | FQA10N80C_F109 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5 mm | 5 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Fall Time | 80 ns | 75 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 130 ns | 115 ns | - |
Factory Pack Quantity | 450 | 30 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 90 ns | 125 ns | - |
Typical Turn On Delay Time | 50 ns | 45 ns | - |
Part # Aliases | FQA10N80C_F109 | FQA10N80_NL | - |
Unit Weight | 0.225789 oz | 0.000198 oz | - |
Type | - | MOSFET | - |
Forward Transconductance Min | - | 10 S | - |