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FQA10N80

FQA10N80
Mfr. #:
FQA10N80
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 800V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQA10N80 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-3PN-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
9.8 A
Rds On - Resistencia de la fuente de drenaje:
1.05 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
240 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
20.1 mm
Longitud:
16.2 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
10 S
Otoño:
75 ns
Tipo de producto:
MOSFET
Hora de levantarse:
115 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
125 ns
Tiempo típico de retardo de encendido:
45 ns
Parte # Alias:
FQA10N80_NL
Unidad de peso:
0.000198 oz
Tags
FQA10N8, FQA10, FQA1, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 800V 9.8A TO-3P
***ser
MOSFETs 800V N-Channel QFET
***ment14 APAC
MOSFET, N TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:9.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.05ohm; Power Dissipation Pd:240W; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:240W; Power Dissipation Pd:240W; Pulse Current Idm:39.2A
Parte # Mfg. Descripción Valores Precio
FQA10N80C_F109
DISTI # 33122296		ON Semiconductor800V, 10A, NCH, MOSFET1350
  • 450:$1.5144
FQA10N80C-F109
DISTI # FQA10N80C-F109-ND		ON SemiconductorMOSFET N-CH 800V 10A TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube		309In Stock
  • 5400:$1.7546
  • 2700:$1.8231
  • 900:$2.2755
  • 450:$2.5359
  • 25:$3.0844
  • 10:$3.2620
  • 1:$3.6300
FQA10N80
DISTI # FQA10N80-ND		ON SemiconductorMOSFET N-CH 800V 9.8A TO-3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FQA10N80C
    DISTI # FQA10N80C-ND    		ON SemiconductorMOSFET N-CH 800V 10A TO-3P
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Limited Supply - Call
      FQA10N80_F109
      DISTI # FQA10N80_F109-ND      		ON SemiconductorMOSFET N-CH 800V 9.8A TO-3P
      RoHS: Compliant
      Min Qty: 450
      Container: Tube      		Limited Supply - Call
        FQA10N80C_F109
        DISTI # V99:2348_06359150        		ON Semiconductor800V, 10A, NCH, MOSFET0
          FQA10N80C_F109
          DISTI # FQA10N80C-F109          		ON SemiconductorTrans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FQA10N80C-F109)
          Min Qty: 164
          Container: Bulk          		Americas - 0
          • 1640:$1.7900
          • 328:$1.8900
          • 492:$1.8900
          • 820:$1.8900
          • 164:$1.9900
          FQA10N80C_F109
          DISTI # FQA10N80C-F109          		ON SemiconductorTrans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA10N80C-F109)
          RoHS: Compliant
          Min Qty: 450
          Container: Tube          		Americas - 0
          • 4500:$1.3900
          • 450:$1.4900
          • 900:$1.4900
          • 1800:$1.4900
          • 2700:$1.4900
          FQA10N80C-F109
          DISTI # 31Y1501          		ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-3PN -3,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.93ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Product Range:-RoHS Compliant: Yes109
          • 500:$2.5100
          • 250:$2.7600
          • 100:$2.9000
          • 50:$3.0300
          • 25:$3.1500
          • 10:$3.2900
          • 1:$3.8100
          FQA10N80
          DISTI # 512-FQA10N80          		ON SemiconductorMOSFET 800V N-Channel QFET
          RoHS: Compliant          		0
            FQA10N80C-F109
            DISTI # 512-FQA10N80C_F109            		ON SemiconductorMOSFET 800V N-Ch QFET Advance
            RoHS: Compliant            		118
            • 1:$3.4500
            • 10:$2.9300
            • 100:$2.5400
            • 250:$2.4100
            • 500:$2.1600
            • 1000:$1.8200
            • 2500:$1.7300
            FQA10N80C
            DISTI # 512-FQA10N80C            		ON SemiconductorMOSFET 800V N-Ch advance QFET
            RoHS: Compliant            		0
              FQA10N80_F109
              DISTI # 512-FQA10N80_F109              		ON SemiconductorMOSFET 800V N-Channel QFET
              RoHS: Compliant              		0
                FQA10N80C-F109ON Semiconductor 
                RoHS: Not Compliant                		4950
                • 1000:$1.7400
                • 500:$1.8300
                • 100:$1.9000
                • 25:$1.9900
                • 1:$2.1400
                FQA10N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 9.8A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
                RoHS: Compliant                		58266
                • 1000:$1.6800
                • 500:$1.7700
                • 100:$1.8500
                • 25:$1.9300
                • 1:$2.0700
                FQA10N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
                RoHS: Compliant                		13611
                • 1000:$1.3700
                • 500:$1.4400
                • 100:$1.5000
                • 25:$1.5600
                • 1:$1.6800
                FQA10N80Fairchild Semiconductor Corporation9.8 A, 800 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET3
                • 4:$2.4200
                • 1:$3.6300
                FQA10N80C-F109ON Semiconductor800V,1.1,10A,N-Channel QFET MOSFET9000
                • 1:$4.4100
                • 100:$2.8200
                • 500:$2.3200
                • 1000:$2.1400
                FQA10N80C-F109
                DISTI # 2453881                		ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-3PN -3209
                • 500:£1.6800
                • 250:£1.8700
                • 100:£1.9800
                • 10:£2.2800
                • 1:£3.0200
                FQA10N80C-F109
                DISTI # 2453881                		ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-3PN -3
                RoHS: Compliant                		109
                • 5000:$2.5800
                • 2500:$2.6700
                • 1000:$2.8000
                • 500:$3.3300
                • 250:$3.7100
                • 100:$3.9100
                • 10:$4.5100
                • 1:$5.3100
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                Disponibilidad
                Valores:
                Available
                En orden:
                5000
                Ingrese la cantidad:
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