FP150R12KT4P

FP150R12KT4P vs FP150R12KT4PB11BPSA1 vs FP150R12KT4PBPSA1

 
PartNumberFP150R12KT4PFP150R12KT4PB11BPSA1FP150R12KT4PBPSA1
DescriptionIGBT ModulesIGBT MODULE 1200V 150AIGBT MODULE 1200V 150A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.75 V--
Continuous Collector Current at 25 C150 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation20 mW--
Package / CaseEconoPIM 3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon / IR--
Mounting StyleThrough Hole--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity6--
SubcategoryIGBTs--
Part # AliasesFP150R12KT4PBPSA1 SP001603798--
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
FP150R12KT4P_B11 IGBT Modules
FP150R12KT4P IGBT Modules
Infineon Technologies
Infineon Technologies
FP150R12KT4PB11BPSA1 IGBT MODULE 1200V 150A
FP150R12KT4PBPSA1 IGBT MODULE 1200V 150A
FP150R12KT4P_B11 IGBT Modules
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