PartNumber | FGA6540WDF | FGA6560WDF | FGA6530WDF |
Description | IGBT Transistors FS3TIGBT TO3PN 40A 650V | IGBT Transistors FS3TIGBT TO3PN 60A 650V | IGBT Transistors FS3 650V SHD prolferation |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-3PN | TO-3PN | TO-3PN-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
Collector Emitter Saturation Voltage | 1.8 V | 1.8 V | 1.8 V |
Maximum Gate Emitter Voltage | 20 V | 30 V | 20 V |
Continuous Collector Current at 25 C | 80 A | 120 A | 60 A |
Pd Power Dissipation | 238 W | 306 W | 176 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | FGA6540WDF | FGA6560WDF | FGA6530WDF |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 80 A | 120 A | 60 A |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Gate Emitter Leakage Current | 400 nA | 400 nA | +/- 400 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 450 | 450 | 450 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.225789 oz | 0.225789 oz | 0.225789 oz |