PartNumber | FGA60N65SMD | FGA6065ADF | FGA60N60UFDTU |
Description | IGBT Transistors 650V, 60A Field Stop IGBT | IGBT Transistors 650V FS Gen3 Trench IGBT | IGBT Transistors 600V 60A FIELD STOP |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-3PN | TO-3PN | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | 600 V |
Collector Emitter Saturation Voltage | 1.9 V | 1.8 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 120 A | 120 A | 120 A |
Pd Power Dissipation | 600 W | 306 W | - |
Series | FGA60N65SMD | FGA6065ADF | FGA60N60UFD |
Packaging | Tube | Tube | Tube |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Gate Emitter Leakage Current | 400 nA | +/- 400 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 450 | 450 | 450 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.225789 oz | 0.225789 oz | 0.225789 oz |
Configuration | - | Single | Single |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 150 C |
Continuous Collector Current Ic Max | - | 60 A | - |