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FGA60N65SMD

FGA60N65SMD
Mfr. #:
FGA60N65SMD
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 650V, 60A Field Stop IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGA60N65SMD Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGA60N65SMD más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3PN
Estilo de montaje:
A través del orificio
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.9 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
120 A
Pd - Disipación de energía:
600 W
Serie:
FGA60N65SMD
Embalaje:
Tubo
Marca:
ON Semiconductor / Fairchild
Corriente de fuga puerta-emisor:
400 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Unidad de peso:
0.225789 oz
Tags
FGA60N65, FGA60N6, FGA60N, FGA60, FGA6, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P
***-Wing Technology
In a Tube of 30, ON Semiconductor FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN
***nell
IGBT, 650V, 120A, TO-3PN; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3PN; No. of Pins: 3Pins;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
FGH60N60SMD Series 600 V 60 A Through Hole Field Stop IGBT - TO-247-3
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W
***ical
Trans IGBT Chip N-CH 650V 100A 340000mW 3-Pin(3+Tab) TO-247 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 50A, Field Stop Trench IGBT
*** Electronic Components
IGBT Transistors 650 V 100 A 240 W
***ark
Fs1Tigbt To247 50A 650V Rohs Compliant: Yes
***i-Key
IGBT TRENCH/FS 650V 100A TO247-3
***DA Technology Co., Ltd.
Product Description Demo for Development.
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
***et Europe
Trans IGBT Chip N-CH 650V 100A 3-Pin TO-3PN Tube
***emi
IGBT, 650 V, 50 A Field Stop Trench
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors FS3TIGBT TO3PN 50A 650V
***ark
RAIL / 650V FS Gen3 Trench IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube
***nell
IGBT, SINGLE, 650V, 120A, TO-3P; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 469W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HB Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 469W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pin
***ical
Trans IGBT Chip N-CH 650V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
***S
French Electronic Distributor since 1988
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAx0N65 650V Field Stop IGBTs
ON Semiconductor FGAx0N65 650V Field Stop IGBTs enable designers to develop a highly reliable system design with higher input voltage while offering optimum performance where low conduction and switching losses are essential. This helps designers of solar power inverters, uninterruptible power supplies (UPS), and welding applications create designs that improve energy efficiency with heat and thermal regulation while keeping the component count low. These 650V IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution and a wide safe operating area.Learn More
Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Parte # Mfg. Descripción Valores Precio
FGA60N65SMD
DISTI # V36:1790_06359446		ON Semiconductor650V 60A FS PLANAR IGBT1
  • 5000:$2.0150
  • 2500:$2.0880
  • 1000:$2.1870
  • 500:$2.2810
  • 250:$2.5339
  • 100:$2.8160
  • 10:$3.3640
  • 1:$3.8880
FGA60N65SMD
DISTI # FGA60N65SMDFS-ND		ON SemiconductorIGBT 650V 120A 600W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		1070In Stock
  • 1350:$2.5280
  • 900:$2.9648
  • 450:$3.2840
  • 10:$4.1740
  • 1:$4.6300
FGA60N65SMD
DISTI # 31352094		ON Semiconductor650V 60A FS PLANAR IGBT29250
  • 450:$2.5749
FGA60N65SMD
DISTI # 30266739		ON Semiconductor650V 60A FS PLANAR IGBT5703
  • 2500:$2.0541
  • 1000:$2.1504
  • 500:$2.5536
  • 250:$2.8512
  • 100:$3.0048
  • 10:$3.4560
FGA60N65SMD
DISTI # FGA60N65SMD		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA60N65SMD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.3900
  • 900:$2.3900
  • 1800:$2.2900
  • 2700:$2.2900
  • 4500:$2.1900
FGA60N65SMD
DISTI # 46AC0815		ON SemiconductorIGBT, 650V, 120A, TO-3PN,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:600W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-3PN,No. of Pins:3Pins,Operating RoHS Compliant: Yes280
  • 1000:$2.8700
  • 500:$3.0400
  • 250:$3.2600
  • 100:$3.5500
  • 1:$4.3100
FGA60N65SMD.
DISTI # 23AC5252		Fairchild Semiconductor CorporationFSPIGBT TO3PN 60A 650V ROHS COMPLIANT: YES0
  • 1000:$2.9800
  • 500:$3.1600
  • 250:$3.3900
  • 100:$3.6900
  • 1:$4.4800
FGA60N65SMD
DISTI # 512-FGA60N65SMD		ON SemiconductorIGBT Transistors 650V, 60A Field Stop IGBT
RoHS: Compliant		445
  • 1:$4.9300
  • 10:$4.1900
  • 100:$3.6300
  • 250:$3.4400
  • 500:$3.0900
FGA60N65SMD
DISTI # 8648795		ON SemiconductorIGBT 650V 60A FIELD STOP TO3PN, EA177
  • 1:£4.3100
  • 5:£3.0800
  • 50:£2.9200
  • 225:£2.5900
  • 450:£2.2700
FGA60N65SMD
DISTI # 8648795P		ON SemiconductorIGBT 650V 60A FIELD STOP TO3PN, TU1771
  • 5:£3.0800
  • 50:£2.9200
  • 225:£2.5900
  • 450:£2.2700
FGA60N65SMD
DISTI # FGA60N65SMD		ON SemiconductorTransistor: IGBT,650V,60A,300W,TO3P461
  • 1:$8.0100
  • 3:$6.9000
  • 10:$5.5400
  • 30:$4.9800
FGA60N65SMDChip 1 Exchange 6784
    FGA60N65SMD
    DISTI # 2825136    		ON SemiconductorIGBT, 650V, 120A, TO-3PN
    RoHS: Compliant    		280
    • 100:$5.0000
    • 10:$5.7700
    • 1:$6.6200
    FGA60N65SMD
    DISTI # 2825136    		ON SemiconductorIGBT, 650V, 120A, TO-3PN
    RoHS: Compliant    		318
    • 500:£2.1200
    • 250:£2.3700
    • 100:£2.5000
    • 10:£2.8700
    • 1:£3.7700
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    Disponibilidad
    Valores:
    760
    En orden:
    2743
    Ingrese la cantidad:
    El precio actual de FGA60N65SMD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,65 US$
    4,65 US$
    10
    3,95 US$
    39,50 US$
    100
    3,42 US$
    342,00 US$
    250
    3,25 US$
    812,50 US$
    500
    2,91 US$
    1 455,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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